All MOSFET. CED840A Datasheet

 

CED840A MOSFET. Datasheet pdf. Equivalent

Type Designator: CED840A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 107 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 125 pF

Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm

Package: TO251

CED840A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CED840A Datasheet (PDF)

1.1. ceu840a ced840a.pdf Size:398K _cet

CED840A
CED840A

CED840A/CEU840A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 500V, 7.5A, RDS(ON) = 0.85? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C un

5.1. ceu84a4 ced84a4.pdf Size:408K _cet

CED840A
CED840A

CED84A4/CEU84A4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 80A, RDS(ON) = 5.1m? @VGS = 10V. RDS(ON) = 7.8m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATIN

Datasheet: CEUF634 , CEUF640 , CED73A3G , CED740A , CED75A3 , CED830G , CED83A3 , CED83A3G , IRFZ34N , CED84A4 , CED85A3 , CED93A3 , CEDF634 , CEDF640 , CEE02N6A , CEE02N6G , CEG2288 .

 


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