All MOSFET. CEM3109 Datasheet

 

CEM3109 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEM3109

Type of Transistor: MOSFET

Type of Control Channel: NP -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 10(8) A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 6 nS

Drain-Source Capacitance (Cd): 170(255) pF

Maximum Drain-Source On-State Resistance (Rds): 0.014(0.02) Ohm

Package: SO8

CEM3109 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM3109 Datasheet (PDF)

1.1. cem3109.pdf Size:615K _cet

CEM3109
CEM3109

CEM3109 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 30V, 10A, RDS(ON) = 14m? @VGS = 10V. RDS(ON) = 20m? @VGS = 4.5V. -30V, -8A, RDS(ON) = 20m? @VGS = -10V. RDS(ON) = 30m? @VGS = -4.5V. D1 D1 D2 D2 Super high dense cell design for extremely low RDS(ON). 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mo

5.1. cem3138.pdf Size:505K _cet

CEM3109
CEM3109

CEM3138 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 9.1A, RDS(ON) = 15m? @VGS = 10V. RDS(ON) = 21m? @VGS = 4.5V. 30V, 6.9A, RDS(ON) = 26m? @VGS = 10V. RDS(ON) = 35m? @VGS = 4.5V. D1 D1 D2 D2 Super high dense cell design for extremely low RDS(ON). 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8

5.2. cem3128.pdf Size:246K _cet

CEM3109
CEM3109

CEM3128 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 9A, RDS(ON) = 16m? @VGS = 10V. RDS(ON) = 23m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 S1 G1 S2 G2 1 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless ot

 5.3. cem3172.pdf Size:385K _cet

CEM3109
CEM3109

CEM3172 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 8.9A, RDS(ON) = 20m? @VGS = 10V. RDS(ON) = 32m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted

5.4. cem3120.pdf Size:387K _cet

CEM3109
CEM3109

CEM3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 10A, RDS(ON) = 15m? @VGS = 10V. RDS(ON) = 22m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted

 5.5. cem3178.pdf Size:378K _cet

CEM3109
CEM3109

CEM3178 PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.6A, RDS(ON) = 22m? @VGS = 10V. RDS(ON) = 33m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25

Datasheet: CEM0415 , CEM1010 , CEM2182 , CEM2539A , CEM26138 , CEM2939 , CEM3032 , CEM3060 , J310 , CEM3120 , CEA3252 , CEB10N65 , CEB12N65 , CEC8218 , CEF05N6 , CEF10N65 , CEF12N65 .

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