All MOSFET. CEM4282 Datasheet

 

CEM4282 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEM4282

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 6.6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 2 nS

Drain-Source Capacitance (Cd): 105 pF

Maximum Drain-Source On-State Resistance (Rds): 0.036 Ohm

Package: SO8

CEM4282 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM4282 Datasheet (PDF)

1.1. cem4282.pdf Size:737K _cet

CEM4282
CEM4282

CEM4282 N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 40V, 6.6A, RDS(ON) = 36m? @VGS = 10V. RDS(ON) = 48m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise no

5.1. cem4201.pdf Size:411K _cet

CEM4282
CEM4282

CEM4201 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -7.5A, RDS(ON) = 28m? @VGS = -10V. RDS(ON) = 38m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise n

5.2. cem4228.pdf Size:104K _cet

CEM4282
CEM4282

CEM4228 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 40V, 6.3A, RDS(ON) = 30m? @VGS = 10V. RDS(ON) = 45m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless

5.3. cem4207.pdf Size:441K _cet

CEM4282
CEM4282

CEM4207 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -40V, -7A, RDS(ON) = 30m? @VGS = -10V. RDS(ON) = 40m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead-free plating ; RoHS compliant. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 2

5.4. cem4279.pdf Size:489K _cet

CEM4282
CEM4282

CEM4279 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 5 40V, 6.1A, RDS(ON) = 32m? @VGS = 10V. RDS(ON) = 46m? @VGS = 4.5V. -40V, -4.3A, RDS(ON) = 66m? @VGS = -10V. RDS(ON) = 105m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mount Pa

5.5. cem4204.pdf Size:407K _cet

CEM4282
CEM4282

CEM4204 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 7.3A, RDS(ON) = 28m? @VGS = 10V. RDS(ON) = 42m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted

5.6. cem4269.pdf Size:598K _cet

CEM4282
CEM4282

CEM4269 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 40V, 6.1A, RDS(ON) = 32m? @VGS = 10V. RDS(ON) = 46m? @VGS = 4.5V. -40V, -5.2A, RDS(ON) = 43m? @VGS = 10V. RDS(ON) = 65m? @VGS = 4.5V. D1 D1 D2 D2 Super high dense cell design for extremely low RDS(ON). 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mount Package

Datasheet: CEM3254 , CEM3258 , CEM3259 , CEM4042 , CEM4204 , CEM4228 , CEM4269 , CEM4279 , TPC8107 , CEM4308 , CEM6056 , CEM6086 , CEM6086L , CEM6088 , CEM6088L , CEM6186 , CEM6188 .

 


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