All MOSFET. CES2314 Datasheet

 

CES2314 MOSFET. Datasheet pdf. Equivalent

Type Designator: CES2314

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.3 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 3 nS

Drain-Source Capacitance (Cd): 182 pF

Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm

Package: SOT23

CES2314 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CES2314 Datasheet (PDF)

1.1. ces2314.pdf Size:139K _cet

CES2314
CES2314

CES2314 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4A, RDS(ON) = 50m? @VGS = 10V. RDS(ON) = 70m? @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS

4.1. ces2313a.pdf Size:409K _cet

CES2314
CES2314

CES2313A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.8A, RDS(ON) = 55m? @VGS = -10V. RDS(ON) = 86m? @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Volta

4.2. ces2316.pdf Size:141K _cet

CES2314
CES2314

CES2316 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4.8A, RDS(ON) = 34m? @VGS = 10V. RDS(ON) = 50m? @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VD

 4.3. ces2317.pdf Size:390K _cet

CES2314
CES2314

CES2317 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.1A, RDS(ON) = 80m? @VGS = -10V. RDS(ON) = 90m? @VGS = -4.5V. RDS(ON) = 120m? @VGS = -2.5V. High dense cell design for extremely low RDS(ON). D Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Sy

4.4. ces2312.pdf Size:275K _cet

CES2314
CES2314

CES2312 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 4.5A, RDS(ON) = 33m? @VGS = 4.5V. RDS(ON) = 40m? @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage V

 4.5. ces2313.pdf Size:386K _cet

CES2314
CES2314

CES2313 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.6A, RDS(ON) = 60m? @VGS = -10V. RDS(ON) = 90m? @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltag

4.6. ces2310.pdf Size:1084K _cet

CES2314
CES2314

CES2310 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4.8A, RDS(ON) = 34m? @VGS = 10V. RDS(ON) = 38m? @VGS = 4.5V. RDS(ON) = 50m? @VGS = 2.5V. RDS(ON) = 60m? @VGS = 1.8V. D High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless other

Datasheet: CEM9935A , CEM9936A , CEN7002A , CES2302 , CES2306 , CES2308 , CES2310 , CES2312 , 2N7000 , CES2316 , CES2320 , CES2324 , CES2342 , CES2362 , CET0215 , CET04N10 , CET3055L .

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