All MOSFET. FDG6301N Datasheet

 

FDG6301N MOSFET. Datasheet pdf. Equivalent

Type Designator: FDG6301N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.3 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Drain Current |Id|: 0.22 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 4 Ohm

Package: SC706

FDG6301N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDG6301N Datasheet (PDF)

1.1. fdg6301n f085.pdf Size:346K _fairchild_semi

FDG6301N
FDG6301N

March 2009 FDG6301N_F085 Dual N-Channel, Digital FET General Description Features 25 V, 0.22 A continuous, 0.65 A peak. These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's RDS(ON) = 4 ? @ VGS= 4.5 V, proprietary, high cell density, DMOS technology. This RDS(ON) = 5 ? @ VGS= 2.7 V. very high density process is especially tailored to

1.2. fdg6301n.pdf Size:103K _fairchild_semi

FDG6301N
FDG6301N

July 1999 FDG6301N Dual N-Channel, Digital FET General Description Features 25 V, 0.22 A continuous, 0.65 A peak. These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's RDS(ON) = 4 ? @ VGS= 4.5 V, proprietary, high cell density, DMOS technology. This RDS(ON) = 5 ? @ VGS= 2.7 V. very high density process is especially tailored to Very l

1.3. fdg6301n.pdf Size:1052K _kexin

FDG6301N
FDG6301N

SMD Type MOSFET Dual N-Channel MOSFET FDG6301N (KDG6301N) ■ Features ● VDS (V) = 25V ● ID = 220m A (VGS = 4.5V) ● RDS(ON) < 4Ω (VGS = 4.5V) ● RDS(ON) < 5Ω (VGS = 2.7V) ● Gate-Source Zener for ESD ruggedness 1 S 1 S1 4 S2 (>6kV Human Body Model). 2 G1 2 G1 5 G2 3 D2 3 D2 6 D1 1 or 4 6 or 3 2 or 5 5 or 2 4 or 1 3 or 6 ■ Absolute Maximum Ratings T

Datasheet: FDD6690A , FDF0610 , FDG311N , FDG312P , FDG313N , FDG314P , FDG315N , FDG316P , IRF9540N , FDG6302P , FDG6303N , FDG6304P , FDN335N , FDN336P , FDN337N , FDN338P , FDN339AN .

 


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