All MOSFET. CES2301 Datasheet

 

CES2301 MOSFET. Datasheet pdf. Equivalent

Type Designator: CES2301

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 2.8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 90 pF

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: SOT23

CES2301 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CES2301 Datasheet (PDF)

1.1. ces2301.pdf Size:845K _cet

CES2301
CES2301

CES2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.8A, RDS(ON) = 100m? @VGS = -4.5V. RDS(ON) = 150m? @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Vol

4.1. ces2302.pdf Size:405K _cet

CES2301
CES2301

CES2302 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.0A, RDS(ON) = 72m? @VGS = 4.5V. RDS(ON) = 110m? @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage

4.2. ces2309.pdf Size:133K _cet

CES2301
CES2301

CES2309 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -2.2A, RDS(ON) = 165m? @VGS = -4.5V. RDS(ON) = 300m? @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drai

4.3. ces2305.pdf Size:265K _cet

CES2301
CES2301

CES2305 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -4A, RDS(ON) = 55m? @VGS = -10V. RDS(ON) = 70m? @VGS = -4.5V. RDS(ON) = 120m? @VGS = -2.5V. High dense cell design for extremely low RDS(ON). D Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Pa

4.4. ces2308(esd).pdf Size:156K _cet

CES2301
CES2301

CES2308 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 5.4A, RDS(ON) = 27m? @VGS = 4.5V. RDS(ON) = 36m? @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Sourc

4.5. ces2306.pdf Size:560K _cet

CES2301
CES2301

CES2306 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.6A, RDS(ON) = 60m? @VGS = 4.5V. RDS(ON) = 70m? @VGS = 2.5V. RDS(ON) = 100m? @VGS = 1.8V. High dense cell design for extremely low RDS(ON). D Lead free product is acquired. Rugged and reliable. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limi

4.6. ces2303.pdf Size:132K _cet

CES2301
CES2301

CES2303 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -1.9A, RDS(ON) = 150m? (typ) @VGS = -10V. RDS(ON) = 230m? (typ) @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain

4.7. ces2307a.pdf Size:424K _cet

CES2301
CES2301

CES2307A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.2A, RDS(ON) = 78m? @VGS = -10V. RDS(ON) = 120m? @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source

4.8. ces2307.pdf Size:402K _cet

CES2301
CES2301

CES2307 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.2A, RDS(ON) = 78m? @VGS = -10V. RDS(ON) = 120m? @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Volta

Datasheet: CEP15P15 , CEP20P06 , CEP20P10 , CEP30P03 , CEP35P10 , CEP50P03 , CEP6601 , CEP95P04 , IRF740 , CES2303 , CES2305 , CES2307 , CES2307A , CES2309 , CES2313 , CES2313A , CES2317 .

 


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