All MOSFET. KMB6D0DN30QA Datasheet

 

KMB6D0DN30QA MOSFET. Datasheet pdf. Equivalent

Type Designator: KMB6D0DN30QA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 11.6 nS

Drain-Source Capacitance (Cd): 111 pF

Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm

Package: FLP8

KMB6D0DN30QA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KMB6D0DN30QA Datasheet (PDF)

1.1. kmb6d0dn35qb.pdf Size:826K _kec

KMB6D0DN30QA
KMB6D0DN30QA

SEMICONDUCTOR KMB6D0DN35QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for DC/DC Converters. T D P G L U FEATURES A ·VDSS=35V, ID=6A. DIM MILLIMETERS ·Drain-Source ON Resistance. _ + A 4.

1.2. kmb6d0dn35qa.pdf Size:60K _kec

KMB6D0DN30QA
KMB6D0DN30QA

SEMICONDUCTOR KMB6D0DN35QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters. H T D P G L FEATURES A VDSS=35V, ID=6A. DIM MILLIMETERS A _ + Drain-Source ON Resistance. 4.85 0.2 B

1.3. kmb6d0dn30qb.pdf Size:374K _kec

KMB6D0DN30QA
KMB6D0DN30QA

SEMICONDUCTOR KMB6D0DN30QB TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche H characteristics. It is mainly suitable for portable equipment and DC-DC T Converter Applications. D P G L U FEATURES A ·VDSS=30V, ID=6A. DIM MILLIMETERS ·Drai

1.4. kmb6d0dn30qa.pdf Size:56K _kec

KMB6D0DN30QA
KMB6D0DN30QA

SEMICONDUCTOR KMB6D0DN30QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC H T Converter Applications. D P G L FEATURES A VDSS=30V, ID=6A. DIM MILLIMETERS A _ + Dra

Datasheet: KMB3D5PS30QA , KMB3D9N40TA , KMB4D0N30SA , KMB4D5DN60QA , KMB4D5NP55Q , KMB4D8DN55Q , KMB5D0NP40Q , KMB5D5NP30Q , 2SK4106 , KMB6D0DN35QA , KMB6D0NP40QA , KMB6D6N30Q , KMB7D0DN40Q , KMB7D0DN40QA , KMB7D0N40QA , KMB7D0NP30Q , KMB7D0NP30QA .

 


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