All MOSFET. KMD7D5P40QA Datasheet

 

KMD7D5P40QA MOSFET. Datasheet pdf. Equivalent

Type Designator: KMD7D5P40QA

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 7.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 240 pF

Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm

Package: FLP8

KMD7D5P40QA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KMD7D5P40QA Datasheet (PDF)

1.1. kmd7d5p40qa.pdf Size:790K _kec

KMD7D5P40QA
KMD7D5P40QA

SEMICONDUCTOR KMD7D5P40QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for H battery protection circuit. T D P G L U FEATURES A ·VDSS=-40V, ID=-7.5A. DIM MILLIMETERS ·Drain-Source ON Resistance. _ + A 4.85 0.2 _ +

Datasheet: KTK920T , KTK920U , KMB035N40DA , KMB6D0DN30QB , KMB6D0NS30QA , KMB7D0DN40QB , KMD6D0DN30QA , KMD6D0DN40Q , IRF730 , KMD9D0DN30QA , KML0D3P20V , KML0D4N20V , KU035N06P , KU047N08P , KU086N10F , KU086N10P , KU310N10D .

 


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