All MOSFET. KHB1D0N70G Datasheet

 

KHB1D0N70G MOSFET. Datasheet pdf. Equivalent

Type Designator: KHB1D0N70G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 0.4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 23.5 pF

Maximum Drain-Source On-State Resistance (Rds): 9 Ohm

Package: TO92

KHB1D0N70G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KHB1D0N70G Datasheet (PDF)

1.1. khb1d0n70g.pdf Size:412K _kec

KHB1D0N70G
KHB1D0N70G

KHB1D0N70G SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast B C switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies and low power battery chargers. N DIM MILLIMETERS A 4.70 MAX E K B 4.8

3.1. khb1d0n60g.pdf Size:1019K _kec

KHB1D0N70G
KHB1D0N70G

SEMICONDUCTOR KHB1D0N60G N-Ch Planer MOSFET TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies and low power battery chargers. FEATURES ·VDSS= 600V, ID= 0.4A ·Drain-Source ON Resistance :

3.2. khb1d0n60i.pdf Size:1023K _kec

KHB1D0N70G
KHB1D0N70G

KHB1D0N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ·VDSS= 600V, ID= 1.0A ·D

3.3. khb1d0n60d i.pdf Size:957K _kec

KHB1D0N70G
KHB1D0N70G

KHB1D0N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 switching mode power s

Datasheet: KF9N25F , KF9N25P , KF9N50F , KF9N50P , KF3N80D , KF3N80I , KF60N06P , KHB1D0N60D , RFP50N06 , KHB1D9N60D , KHB1D9N60I , KHB2D0N60F , KHB2D0N60F2 , KHB2D0N60P , KHB3D0N70F , KHB3D0N70P , KHB3D0N90F1 .

 


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