All MOSFET. FDS3580 Datasheet

 

FDS3580 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDS3580

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 7.6 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.027 Ohm

Package: SO8

FDS3580 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDS3580 Datasheet (PDF)

1.1. fds3580.pdf Size:83K _fairchild_semi

FDS3580
FDS3580

December 2000 FDS3580 ? ? ? ? 80V N-Channel PowerTrench? MOSFET General Description Features • 7.6 A, 80 V. RDS(ON) = 0.029 ? @ VGS = 10 V This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using RDS(ON) = 0.033 ? @ VGS = 6 V. either synchronous or conventional switching PWM controllers. • Low gate charge (34nC typical). These

5.1. fds3590.pdf Size:86K _fairchild_semi

FDS3580
FDS3580

November 2000 FDS3590 80V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed • 6.5 A, 80 V RDS(ON) = 39 m? @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 44 m? @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. • Low gate charge These MOSFETs feature faster switching a

5.2. fds3572.pdf Size:628K _fairchild_semi

FDS3580
FDS3580

November 2003 FDS3572 N-Channel PowerTrench® MOSFET 80V, 8.9A, 16m? Features Applications • rDS(ON) = 14m? (Typ.), VGS = 10V, ID = 8.9A • Primary switch for Isolated DC/DC converters • Qg(tot) = 31nC (Typ.), VGS = 10V • Distributed Power and Intermediate Bus Architectures • Low Miller Charge • High Voltage Synchronous Rectifier for DC Bus • Low QRR Body Diode Converters • Optimized ef

5.3. fds3512.pdf Size:86K _fairchild_semi

FDS3580
FDS3580

May 2001 FDS3512 80V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed • 4.0 A, 80 V RDS(ON) = 70 m? @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 80 m? @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. • Low gate charge (13nC Typical) These MOSFETs featur

Datasheet: FDR8305N , FDR8308P , FDR836P , FDR838P , FDR8508P , FDR856P , FDR858P , FDS3570 , IRF520 , FDS4410 , FDS4435 , FDS4435A , FDS4953 , FDS5680 , FDS5690 , FDS6375 , FDS6570A .

 


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