All MOSFET. SE2312 Datasheet

 

SE2312 MOSFET. Datasheet pdf. Equivalent

Type Designator: SE2312

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.35 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 105 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0318 Ohm

Package: SOT23

SE2312 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SE2312 Datasheet (PDF)

1.1. se2312.pdf Size:426K _willas

SE2312
SE2312

FM120-M WILLAS THRU SE2312 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize b

Datasheet: BSS84LT1 , BSS84WT1 , SE2301 , SE2302 , SE2303 , SE2304 , SE2305 , SE2306 , CEP83A3 , SE2321 , SE3400 , SE3401 , SE3404 , SE3406 , SE3407 , SE3415 , SE4812LT1 .

 


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