All MOSFET. H04N65E Datasheet

 

H04N65E MOSFET. Datasheet pdf. Equivalent

Type Designator: H04N65E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 70 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 19 nS

Drain-Source Capacitance (Cd): 50 pF

Maximum Drain-Source On-State Resistance (Rds): 3 Ohm

Package: TO220AB

H04N65E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H04N65E Datasheet (PDF)

4.1. h04n65.pdf Size:169K _hsmc

H04N65E
H04N65E

Spec. No. : MOS200802 HI-SINCERITY Issued Date : 2008.07.22 Revised Date :2009.03.23 MICROELECTRONICS CORP. Page No. : 1/6 H04N65 Series Pin Assignment H04N65 Series Tab 3-Lead Plastic TO-220AB N-Channel Power Field Effect Transistor (650V, 4A) Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Description 3 2 1 This advanced high voltage MOSFET is desi

5.1. h04n60.pdf Size:123K _hsmc

H04N65E
H04N65E

Spec. No. : MOS200404 HI-SINCERITY Issued Date : 2004.07.01 Revised Date :2010.10.14 MICROELECTRONICS CORP. Page No. : 1/6 H04N60 Series Pin Assignment H04N60 Series Tab 3-Lead Plastic TO-263 Package Code: U N-Channel Power Field Effect Transistor (600V, 4A) Pin 1: Gate Pin 2 & Tab: Drain 3 2 Pin 3: Source 1 Description Tab 3-Lead Plastic TO-220AB This advanced hig

Datasheet: H02N60SI , H02N60SJ , H02N65E , H02N65F , H03N60E , H03N60F , H04N60E , H04N60F , SPA11N60C3 , H04N65F , H05N50E , H05N50F , H05N60E , H05N60F , H06N60E , H06N60F , H07N60E .

 


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