All MOSFET. FDS6912A Datasheet

 

FDS6912A MOSFET. Datasheet pdf. Equivalent

Type Designator: FDS6912A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm

Package: SO8

FDS6912A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDS6912A Datasheet (PDF)

1.1. fds6912a.pdf Size:120K _fairchild_semi

FDS6912A
FDS6912A

July 2003 FDS6912A Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced • 6 A, 30 V. RDS(ON) = 28 m? @ VGS = 10 V using Fairchild Semiconductor’s advanced RDS(ON) = 35 m? @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain • Fast switching speed sup

3.1. fds6912.pdf Size:75K _fairchild_semi

FDS6912A
FDS6912A

July 2000 FDS6912 ? ? ? Dual N-Channel Logic Level PWM Optimized PowerTrench? MOSFET General Description Features These N-Channel Logic Level MOSFETs have been • 6 A, 30 V. RDS(ON) = 0.028 ? @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 0.042 ? @ VGS = 4.5 V. DC/DC converters using either synchronous or • Optimized for use in switching DC/DC converte

4.1. fds6911.pdf Size:110K _fairchild_semi

FDS6912A
FDS6912A

March 2006 FDS6911 Dual N-Channel Logic Level PowerTrench® MOSFET 20V, 7.5A, 13m? General Description Features These N-Channel Logic Level MOSFETs are produced rDS(on) = 13 m? @ VGS = 10 V using Fairchild Semiconductor’s advanced rDS(on) = 17 m? @ VGS = 4.5 V PowerTrench process that has been especially tailored Fast switching speed to minimize the on-state resistance and

4.2. fds6910.pdf Size:112K _fairchild_semi

FDS6912A
FDS6912A

September 2004 FDS6910 ? ? ? Dual N-Channel Logic Level PowerTrench? MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced • 7.5 A, 30 V. RDS(ON) = 13 m? @ VGS = 10 V using Fairchild Semiconductor’s advanced RDS(ON) = 17 m? @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain • F

Datasheet: FDS6675 , FDS6680 , FDS6680A , FDS6685 , FDS6690A , FDS6875 , FDS6890A , FDS6912 , CEP83A3 , FDS6930A , FDS6961A , FDS6975 , FDS6982 , FDS6990A , FDS8433A , FDS8926A , FDS8934A .

 


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