All MOSFET. 2SJ49 Datasheet

 

2SJ49 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ49

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 140 V

Maximum Gate-Source Voltage |Vgs|: 14 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 400 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO3

2SJ49 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ49 Datasheet (PDF)

1.1. 2sj494.pdf Size:71K _upd

2SJ49
2SJ49

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION (in millimeter) This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. 4.5±0.2 10.0±0.3 3.2±0.2 2.7±0.2 FEATURES • Super Low On-State Resistance RDS(on)1 = 50 mΩ Max. (VGS = –10 V, ID = –1

1.2. 2sj498.pdf Size:106K _upd

2SJ49
2SJ49

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN   Keep safety in your circuit designs ! ・ Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

1.3. 2sj492.pdf Size:50K _upd

2SJ49
2SJ49

SMD Type MOSFET MOS Field Effect Transistor 2SJ492 TO-263 Unit: mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 Low on-state resistance RDS(on)1 = 100 m (MAX.) (VGS =-10V, ID =-10A) RDS(on)2 = 185 m (MAX.) (VGS =-4 V, ID =-10 A) +0.1 Low Ciss: Ciss = 1210 pF (TYP.) 0.1max 1.27-0.1 Built-in gate protection diode +0.1 0.81-0.1 2.54 1Gate +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 2D

1.4. 2sj495.pdf Size:178K _upd

2SJ49
2SJ49

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

1.5. 2sj499.pdf Size:31K _sanyo

2SJ49
2SJ49

Ordering number : ENN6589 2SJ499 P-Channel Silicon MOSFET 2SJ499 Load Switching Applications Features Package Dimensions Low ON-state resistance. unit : mm 4V drive. 2083B [2SJ499] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit : mm 2092B [2SJ499] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1 : Gate 1.2

1.6. r07ds0433ej 2sj496.pdf Size:107K _renesas

2SJ49
2SJ49

Preliminary Datasheet R07DS0433EJ0400 2SJ496 (Previous: REJ03G0870-0300) Rev.4.00 Silicon P Channel MOS FET Jun 07, 2011 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 ? typ. (at VGS = 10 V, ID = 2.5 A) 4 V gate drive devices. Large current capacitance ID = 5 A Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92

1.7. 2sj496.pdf Size:87K _renesas

2SJ49
2SJ49

2SJ496 Silicon P Channel MOS FET REJ03G0870-0300 (Previous: ADE-208-482A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 ? typ. (at VGS = 10 V, ID = 2.5 A) 4 V gate drive devices. Large current capacitance ID = 5 A Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) D 1. Source G 2

1.8. 2sj494.pdf Size:71K _nec

2SJ49
2SJ49

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION (in millimeter) This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. 4.50.2 10.00.3 3.20.2 2.70.2 FEATURES Super Low On-State Resistance RDS(on)1 = 50 m? Max. (VGS = 10 V, ID = 10 A) RDS(on)2

1.9. 2sj493.pdf Size:65K _nec

2SJ49
2SJ49

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ493 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION This product is P-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SJ493 Isolated TO-220 FEATURES Super low on-state resistance RDS(on)1 = 100 m? (MAX.) (VGS = 10 V, ID = 8 A) RDS(on)2 = 185 m? (

1.10. 2sj495.pdf Size:74K _nec

2SJ49
2SJ49

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect Transistor (in millimeter) designed for high current switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2 FEATURES Super Low On-State Resistance RDS(on)1 = 30 m? MAX. (VGS = 10 V, ID = 15 A) RDS(

1.11. 2sj492 2sj492-s 2sj492-zj.pdf Size:71K _nec

2SJ49
2SJ49

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ492 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION This product is P-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for DC/DC converters and motor/lamp driver 2SJ492 TO-220AB circuits. 2SJ492-S TO-262 2SJ492-ZJ TO-263 FEATURES Low on-state resistance RDS(on)1 = 100 m? (MAX.) (VGS = 10

1.12. 2sj48 2sj49 2sj50.pdf Size:192K _hitachi

2SJ49
2SJ49

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

1.13. 2sj492-zj.pdf Size:1625K _kexin

2SJ49
2SJ49

SMD Type MOSFET P-Channel MOSFET 2SJ492-ZJ ■ Features ● VDS (V) =-60V ● ID =-20 A ● RDS(ON) < 100m Ω (VGS =-10V) ● RDS(ON) < 185mΩ (VGS =-4V) ● Low Ciss: Ciss = 1210 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V VGS(AC) ± 20 Gate-Sourc

Datasheet: 2SJ363 , 2SJ364 , 2SJ365 , 2SJ368 , 2SJ387 , 2SJ399 , 2SJ451 , 2SJ48 , BF245C , 2SJ50 , 2SJ574 , 2SJ576 , 2SJ590LS , 2SJ601 , 2SJ601Z , 2SJ74 , 2SK1016 .

 


2SJ49
  2SJ49
  2SJ49
 

social 

LIST

Last Update

MOSFET: IRLZ34SPBF | IRLZ34S | IRLZ34PBF | IRLZ34NSPBF | IRLZ34NPBF | IRLZ34NLPBF | IRLZ34L | IRLZ44NSPBF | IRLZ44NPBF | IRLZ44NLPBF | IRLZ44ZSPBF | IRLZ44ZPBF | IRLZ44ZLPBF | IRLZ44SPBF | IRLZ44S |