All MOSFET. 2SK1310 Datasheet

 

2SK1310 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK1310

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 40 pF

Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm

Package: 2-22C1A

2SK1310 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1310 Datasheet (PDF)

1.1. 2sk1310.pdf Size:135K _toshiba

2SK1310
2SK1310

1.2. 2sk1310a.pdf Size:174K _toshiba

2SK1310
2SK1310

2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Unit in mm Output Power : Po ? 190 W (Min.) Drain Efficiency : ? = 65% (Typ.) D Frequency : f = 230 MHz Push-Pull Structure Package MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 100 V Gate-Source Vol

4.1. rej03g0927 2sk1313lsds.pdf Size:108K _renesas

2SK1310
2SK1310

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. rej03g0928 2sk1316lsds.pdf Size:141K _renesas

2SK1310
2SK1310

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.3. rej03g0930 2sk1318ds.pdf Size:96K _renesas

2SK1310
2SK1310

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.4. e2081267 2sk1315l.pdf Size:76K _renesas

2SK1310
2SK1310

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.5. rej03g0929 2sk1317ds.pdf Size:96K _renesas

2SK1310
2SK1310

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.6. 2sk1315 2sk1316.pdf Size:30K _hitachi

2SK1310
2SK1310

2SK1315(L)(S), 2SK1316(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Source S 4. Drain 2SK1315(L)(S), 2SK1316(L)(S) Absolute M

4.7. 2sk1318.pdf Size:63K _hitachi

2SK1310
2SK1310

2SK1318 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1269 (Z) 1st. Edition Jan. 2001 Features Low on-resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SK1318 Absolute

4.8. 2sk1313 2sk1314.pdf Size:30K _hitachi

2SK1310
2SK1310

2SK1313(L)(S), 2SK1314(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Source S 4. Drain 2SK1313(L)(S), 2SK1314(L)(S) Absolute Maximum Ratings

4.9. 2sk1317.pdf Size:48K _hitachi

2SK1310
2SK1310

2SK1317 Silicon N-Channel MOS FET Application High speed power switching Features High breakdown voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1317 Absolute Maximum Ratings (Ta = 25C) Item Symbo

Datasheet: 2SK1165 , 2SK1166 , 2SK1215 , 2SK1270 , 2SK1277 , 2SK1278 , 2SK1279 , 2SK1296 , 2SK117 , 2SK1315S , 2SK133 , 2SK134 , 2SK135 , 2SK1336 , 2SK1337 , 2SK1400 , 2SK1400A .

 


2SK1310
  2SK1310
  2SK1310
 

social 

LIST

Last Update

MOSFET: IRLL2703PBF | IRLL110TRPBF | IRLL024ZPBF | IRLL024NPBF | IRLL014PBF | IRLL014NPBF | IRLL3303PBF | IRLL2705PBF | IRF200B211 | IRF1902PBF | IRF1704 | IRF1607PBF | IRF150SMD | IRF150C | IRF150B |