All MOSFET. 2SK324 Datasheet

 

2SK324 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK324

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 400 pF

Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm

Package: TO3

2SK324 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK324 Datasheet (PDF)

1.1. 2sk324.pdf Size:46K _no

2SK324

5.1. 2sk3299-s-zj.pdf Size:81K _update

2SK324
2SK324

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3299 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3299 is N-Channel MOS FET device that features PART NUMBER PACKAGE a low gate charge and excellent switching characteristics, 2SK3299 TO-220AB designed for high voltage applications such as switching power 2SK3299-S TO-262 supply, AC adapter. 2S

5.2. 2sk319 2sk320.pdf Size:51K _update

2SK324



5.3. 2sk3272-01sj-01s-01l.pdf Size:355K _update

2SK324
2SK324

2SK3272-01L,S,SJ 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof See to P4 Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise s

5.4. 2sk3224-z.pdf Size:256K _update

2SK324
2SK324

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.5. 2sk3230.pdf Size:171K _update

2SK324
2SK324

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.6. 2sk3288entl.pdf Size:91K _update

2SK324
2SK324

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.7. 2sk3221.pdf Size:230K _update

2SK324
2SK324

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.8. 2sk3298.pdf Size:226K _update

2SK324
2SK324

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.9. 2sk3203l 2sk3203s.pdf Size:54K _update

2SK324
2SK324

2SK3203(L), 2SK3203(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-1384A (Z) 2nd. Edition Jan. 2001 Features • Low on-resistance RDS(on) =11m typ. • Low drive current • 5V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 2 3 1 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3203(L), 2SK3203(S) Absolute Maximum Ratings (Ta = 2

5.10. 2sk3268.pdf Size:171K _update

2SK324
2SK324

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOS FETs 2SK3268 Silicon N-channel power MOS FET ■ Features ■ Package • Avalanche energy capability guaranteed • Code • High-speed switching U-DL • Low ON resistance Ron • Pin Name • No secondary breakdown 1: Gate • Low-voltage drive 2: Drain • High electrostatic energy capability 3: Source

5.11. 2sk3298b.pdf Size:291K _update

2SK324
2SK324

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.12. 2sk3225-z.pdf Size:266K _update

2SK324
2SK324

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.13. 2sk3295.pdf Size:42K _update

2SK324
2SK324

SMD Type IC SMD Type Transistors MOS Field Effect Transistor 2SK3295 TO-263 Unit: mm Features +0.2 4.5 V drive available 4.57-0.2 1.27+0.1 -0.1 Low on-state resistance RDS(on)1 =18 mÙMAX. (VGS =10V, ID =18A) Low gate charge QG =16nCTYP. (ID =35A, VDD =16V, VGS =10V) 0.1max 1.27+0.1 -0.1 Built-in gate protection diode +0.1 Surface mount device available 0.81-0.1 2.54 1Gate

5.14. 2sk3269.pdf Size:45K _update

2SK324

SMD Type MOSFET N-Channel Enhacement Mode MOSFET 2SK3269 TO-263 Unit: mm +0.2 Features 4.57-0.2 +0.1 1.27-0.1 4.5 V drive available Low on-state resistance RDS(on)1 =12m MAX. (VGS =10V, ID =18 A) +0.1 0.1max 1.27-0.1 Low gate charge QG = 30 nC TYP. (ID =35 A, VDD =16 V, VGS =10 V) +0.1 0.81-0.1 2.54 Built-in gate protection diode 1Gate +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.

5.15. 2sk3277.pdf Size:217K _update

2SK324
2SK324

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3277 Silicon N-channel power MOSFET Unit: mm 6.5±0.1 ■ Features 2.3±0.1 5.3±0.1 4.35±0.1 • Avalanche energy capability guaranteed 0.5±0.1 • High-speed switching • No secondary breakdown ■ Applications 1.0±0.1 • Non-contact relay 0.1±0.05 0.5±0.1 • Solenoid drive 0.75±0.1 2.

5.16. 2sk3219-01mr.pdf Size:147K _update

2SK324
2SK324

FUJI POWER MOS-FET 2SK3219-01MR N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25

5.17. 2sk3294.pdf Size:46K _update

2SK324

SMD Type MOSFET MOS Field Effect Transistor 2SK3294 TO-263 Unit: mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 Gate voltage rating 30 V Low on-state resistance RDS(on) = 160 m MAX. (VGS =10V, ID =10A) +0.1 0.1max 1.27-0.1 Low input capacitance Ciss =1500pFTYP. (VDS =10 V, VGS =0 V) +0.1 0.81-0.1 2.54 Avalanche capability rated 1Gate +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 Bu

5.18. 2sk325.pdf Size:39K _update

2SK324



5.19. 2sk3265.pdf Size:732K _toshiba

2SK324
2SK324

2SK3265 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK3265 Chopper Regulators DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.72 ? (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 700 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V,

5.20. 2sk3205.pdf Size:196K _toshiba

2SK324
2SK324

2SK3205 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK3205 Switching Regulator Applications DC-DC Converter, and Unit: mm Motor Drive Applications 4 V gate drive Low drain-source ON resistance : RDS (ON) = 0.36 ? (typ.) High forward transfer admittance : |Yfs| = 4.5 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 150 V) Enhance

5.21. 2sk3296.pdf Size:422K _toshiba

2SK324
2SK324

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3296 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3296 TO-220AB designed for low voltage high current applications such as 2SK3296-S TO-262 DC/DC converter with s

5.22. 2sk3236.pdf Size:228K _toshiba

2SK324
2SK324

2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236 Switching Regulator Applications, DC-DC Converter and Unit: mm Motor Drive Applications 4 V gate drive Low drain-source ON resistance: R = 13.5 m? (typ.) DS (ON) High forward transfer admittance: |Y | = 42 S (typ.) fs Low leakage current: IDSS = 100 A (max) (VDS = 60 V) Enhancement

5.23. 2sk3291.pdf Size:34K _sanyo

2SK324
2SK324

Ordering number:ENN6413 N-Channel Silicon MOSFET 2SK3291 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A 4V drive. [2SK3291] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Paramete

5.24. 2sk3278.pdf Size:30K _sanyo

2SK324
2SK324

Ordering number : ENN6680 2SK3278 N-Channel Silicon MOSFET 2SK3278 DC/DC Converter Applications Features Package Dimensions Low ON-resistance. unit : mm 4V drive. 2083B Ultrahigh-speed switching. [2SK3278] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit : mm 2092B [2SK3278] 6.5 2.3 5.0 0.5 4 0.5 0.8

5.25. 2sk3293.pdf Size:42K _sanyo

2SK324
2SK324

Ordering number:ENN6345 N-Channel Silicon MOSFET 2SK3293 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A 4V drive. [2SK3293] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Paramete

5.26. 2sk3255.pdf Size:10K _sanyo

2SK324

2SK3255 N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Low Qg. Absolute Maximum Ratings / Ta=25°C unit Drain to Source Voltage VDSS 900 V Gate to Source Voltage VGSS ± 30 V Drain Current(DC) ID* 5 A Drain Current(Pulse) IDP 15 A Allowable power Dissipation PD 35 W (TC=25°C) Channel Tempera

5.27. 2sk3284.pdf Size:34K _sanyo

2SK324
2SK324

Ordering number : ENA0168 2SK3284 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3284 Applications Features • Low ON-resistance. • Low Qg. • Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) ID 10 A Drain

5.28. 2sk3285.pdf Size:48K _sanyo

2SK324
2SK324

Ordering number:ENN6358 N-Channel Silicon MOSFET 2SK3285 DC/DC Converter Applications Features Package Dimensions Low ON resistance. unit:mm 4V drive. 2093A [2SK3285] 4.5 10.2 1.3 1.2 0.8 0.4 1 2 3 1 : Gate 2 : Drain 3 : Source 2.55 2.55 SANYO : SMP unit:mm 2169 [2SK3285] 4.5 10.2 1.3 1 2 3 1.2 0.8 2.55 2.55 0.4 1 : Gate 2 : Drain 3 : Source 2.55 2.55 SAN

5.29. 2sk3280.pdf Size:45K _sanyo

2SK324
2SK324

Ordering number:ENN6436 N-Channel Silicon MOSFET 2SK3280 DC/DC Converter Applications Features Package Dimensions Low ON-resistance. unit:mm 4V drive. 2083B Ultrahigh-speed switching. [2SK3280] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SK3280] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3

5.30. 2sk3283.pdf Size:23K _sanyo

2SK324
2SK324

Ordering number : ENN6600 2SK3283 N-Channel Silicon MOSFET 2SK3283 Load S/W Applications Preliminary Features Package Dimensions Low ON resistance. unit : mm 4V-drive. 2083B [2SK3283] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit : mm 2092B [2SK3283] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1 : Gate

5.31. 2sk3292.pdf Size:33K _sanyo

2SK324
2SK324

Ordering number:ENN6414 N-Channel Silicon MOSFET 2SK3292 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A 4V drive. [2SK3292] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Paramete

5.32. 2sk3210.pdf Size:157K _renesas

2SK324
2SK324

2SK3210(L), 2SK3210(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G0414-0300 (Previous ADE-208-760A (Z)) Rev.3.00 Sep. 30, 2004 Features Low on-resistance RDS = 40 m? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK D 4 4 1. Gate 2. Drain G 3. Source 4. Drain 1 2 3 1 2 3 S Absolute Maximum Ratings (Ta = 25

5.33. r07ds0409ej 2sk3210ls.pdf Size:164K _renesas

2SK324
2SK324

Preliminary Datasheet 2SK3210(L), 2SK3210(S) R07DS0409EJ0400 (Previous: REJ03G0414-0300) Silicon N Channel MOS FET Rev.4.00 High Speed Power Switching May 16, 2011 Features Low on-resistance RDS = 40 m? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package

5.34. rej03g1092 2sk3212ds.pdf Size:104K _renesas

2SK324
2SK324

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.35. 2sk3212.pdf Size:94K _renesas

2SK324
2SK324

2SK3212 Silicon N Channel MOS FET High Speed Power Switching REJ03G1092-0300 (Previous: ADE-208-752A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =0.1 ? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3 Rev.3.00 S

5.36. 2sk3211.pdf Size:94K _renesas

2SK324
2SK324

2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1091-0400 Rev.4.00 May 15, 2006 Features Low on-resistance RDS = 60 m? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(L)) (Package name: LDPAK(S)-(1)) 4 D

5.37. 2sk3209.pdf Size:53K _renesas

2SK324
2SK324

2SK3209 Silicon N Channel MOS FET High Speed Power Switching REJ03G1090-0300 (Previous: ADE-208-759A) Target Specification Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS = 40 m? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source

5.38. 2sk3228.pdf Size:87K _renesas

2SK324
2SK324

2SK3228 Silicon N Channel MOS FET High Speed Power Switching REJ03G1094-0400 Rev.4.00 May 15, 2006 Features Low on-resistance RDS (on) = 6 m? typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate 2. Drain (Flange) G 3. Source 1 2 3 S Rev.4.00 May 15, 2006 page

5.39. rej03g1094 2sk3228ds.pdf Size:101K _renesas

2SK324
2SK324

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.40. 2sk3288.pdf Size:56K _renesas

2SK324
2SK324

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

5.41. 2sk3289.pdf Size:42K _renesas

2SK324
2SK324

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

5.42. 2sk3290.pdf Size:42K _renesas

2SK324
2SK324

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

5.43. rej03g1098 2sk3274lsds.pdf Size:140K _renesas

2SK324
2SK324

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.44. 2sk3287.pdf Size:57K _renesas

2SK324
2SK324

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

5.45. 2sk3229.pdf Size:53K _renesas

2SK324
2SK324

2SK3229 Silicon N Channel MOS FET High Speed Power Switching REJ03G1095-0200 (Previous: ADE-208-766) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS (on) = 6 m? typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D 1. Gate 2. Drain G 3. Source S 1 2 3 Rev.2.0

5.46. 2sk3274.pdf Size:127K _renesas

2SK324
2SK324

2SK3274 (L), 2SK3274 (S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1098-0300 Rev.3.00 May 15, 2006 Features Low on-resistance RDS (on) = 10 m? typ. 4.5 V gate drive device High speed switching Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (L)-(2) ) (Package name: DPAK (S) ) 4 D 2 4 1. Gate 1

5.47. rej03g1091 2sk3211lsds.pdf Size:108K _renesas

2SK324
2SK324

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.48. rej03g1090 2sk3209ds.pdf Size:66K _renesas

2SK324
2SK324

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.49. 2sk3230.pdf Size:123K _nec

2SK324
2SK324

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK3230B is suitable for converter of ECM. 0.3 0.05 0.1+0.1 0.05 General-purpose product. FEATURES 3 Low noise: -108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 k?) 2 1 Especially suitable

5.50. 2sk321.pdf Size:205K _panasonic

2SK324
2SK324

5.51. 2sk3264-01mr.pdf Size:882K _fuji

2SK324
2SK324

5.52. 2sk3214.pdf Size:28K _hitachi

2SK324
2SK324

2SK3214 Silicon N Channel MOS FET High Speed Power Switching ADE-208-763(Z) Target Specification 1st. Edition December 1998 Features • Low on-resistance RDS =130mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1. Gate 1 2. Drain(Flange) 2 3. Source 3 S 2SK3214 Absolute Maximum Ratings (Ta = 25° C) Item S

5.53. 2sk3203.pdf Size:58K _hitachi

2SK324
2SK324

2SK3203(L), 2SK3203(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-1384A (Z) 2nd. Edition Jan. 2001 Features • Low on-resistance RDS(on) =11m typ. • Low drive current • 5V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 2 3 1 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3203(L), 2SK3203(S) Absolute Maximum Ratings (Ta = 2

5.54. 2sk3233.pdf Size:46K _hitachi

2SK324
2SK324

2SK3233 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1369 (Z) 1st. Edition Mar. 2001 Features Low on-resistance: RDS(on) = 1.1 ? typ. Low leakage current: IDSS = 1 A max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) Avalanche ratings Outlin

5.55. 2sk322.pdf Size:29K _hitachi

2SK324
2SK324

2SK322 Silicon N-Channel Junction FET Application HF wide band amplifier Outline MPAK 3 1 1. Drain 2. Source 2 3. Gate 2SK322 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Gate to drain voltage VGDO 15 V Gate to source voltage VGSO 15 V Drain current ID 50 mA Gate current IG 5mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 C Storage tem

5.56. 2sk3224-z.pdf Size:948K _kexin

2SK324
2SK324

SMD Type MOSFET N-Channel MOSFET 2SK3224-Z TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 ■ Features +0.2 5.30-0.2 +0.8 0.50 -0.7 ● VDS (V) = 60V ● ID = 20 A (VGS = 10V) ● RDS(ON) < 40mΩ (VGS = 10V) 0.127 +0.1 0.80-0.1 max ● RDS(ON) < 60mΩ (VGS = 4V) ● Low Ciss : Ciss = 790 pF TYP. + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4 .60 -0.15 Drain 2 Drain 3 So

5.57. 2sk3225.pdf Size:1697K _kexin

2SK324
2SK324

SMD Type MOSFET N-Channel MOSFET 2SK3225 TO-252 Unit: mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 -0.2 +0.8 0.50 -0.7 ■ Features ● VDS (V) = 60V 4 ● ID = 34 A (VGS = 10V) ● RDS(ON) < 18mΩ (VGS = 10V) 0.127 0.80+0.1 max -0.1 ● RDS(ON) < 27mΩ (VGS = 4V) ● Low input capacitance Ciss = 2100 pF TYP 1 Gate 2 Drain 2.3 0.60+ 0.1 - 0.1 3 Source +0.15 4.6

5.58. 2sk3269-zj.pdf Size:941K _kexin

2SK324
2SK324

SMD Type MOSFET N-Channel MOSFET 2SK3269-ZJ ■ Features ● VDS (V) = 100V ● ID = 25 A (VGS = 10V) ● RDS(ON) < 100mΩ (VGS = 10V) D ● Low on-resistance, Low Qg ● High avalanche resistance G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 Continuous Drain Current ID 25 A Puls

Datasheet: AP04N80I-HF , AP04N80R-HF , 2SK4097LS , 2SK2103 , 2SK315 , 2SK321 , 2SK322 , 2SK3230B , IRFP4332 , 2SK3280 , 2SK3283 , 2SK3284 , AP0503GMT-HF , AP0504GH-HF , AP0504GMT-HF , AP05N20GH-HF , AP05N20GI-HF .

 


2SK324
  2SK324
  2SK324
 

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MOSFET: IRLZ34SPBF | IRLZ34S | IRLZ34PBF | IRLZ34NSPBF | IRLZ34NPBF | IRLZ34NLPBF | IRLZ34L | IRLZ44NSPBF | IRLZ44NPBF | IRLZ44NLPBF | IRLZ44ZSPBF | IRLZ44ZPBF | IRLZ44ZLPBF | IRLZ44SPBF | IRLZ44S |