All MOSFET. AP15N03GH-HF Datasheet

 

AP15N03GH-HF MOSFET. Datasheet pdf. Equivalent

Type Designator: AP15N03GH-HF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 26 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 22.5 nS

Drain-Source Capacitance (Cd): 107 pF

Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm

Package: TO252

AP15N03GH-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP15N03GH-HF Datasheet (PDF)

1.1. ap15n03ghj-hf.pdf Size:216K _a-power

AP15N03GH-HF
AP15N03GH-HF

AP15N03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low Gate Charge D BVDSS 30V Ў Simple Drive Requirement RDS(ON) 80m? Ў Fast Switching ID 15A G Ў RoHS Compliant S Description G TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount applications and suited for low voltage applicati

1.2. ap15n03gh.pdf Size:233K _a-power

AP15N03GH-HF
AP15N03GH-HF

AP15N03GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge D BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 80mΩ ▼ Fast Switching ID 15A G ▼ RoHS Compliant S Description AP15N03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G D S TO-252(H)

2.1. ap15n03gj.pdf Size:209K _a-power

AP15N03GH-HF
AP15N03GH-HF

AP15N03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge D BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 80mΩ ▼ Fast Switching ID 15A G S Description G TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount applications and suited for low voltage applications such as

2.2. ap15n03gi.pdf Size:93K _a-power

AP15N03GH-HF
AP15N03GH-HF

AP15N03GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge D BVDSS 30V ▼ Simple Drive Requirement RDS(ON) 80mΩ ▼ Fast Switching Characteristic ID 15A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

Datasheet: AP13N50R-HF , AP13N50W , AP13P15GH-HF , AP13P15GJ-HF , AP13P15GP-HF , AP13P15GS-HF , AP1430GEU6-HF , AP14S50S-HF , IRFZ44V , AP15N03GJ-HF , AP15P10GH-HF , AP15P10GJ-HF , AP15P10GP , AP15P10GS , AP15P15GH-HF , AP15P15GI , AP15P15GM-HF .

 


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