All MOSFET. AP18T10AGH-HF Datasheet

 

AP18T10AGH-HF MOSFET. Datasheet pdf. Equivalent

Type Designator: AP18T10AGH-HF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 27.8 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 55 pF

Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm

Package: TO252

AP18T10AGH-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP18T10AGH-HF Datasheet (PDF)

1.1. ap18t10agk-hf.pdf Size:90K _a-power

AP18T10AGH-HF
AP18T10AGH-HF

AP18T10AGK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 100V Ў Lower Gate Charge RDS(ON) 160m? Ў Fast Switching Characteristic ID 2.8A G Ў Halogen Free & RoHS Compliant Product S D Description S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, D

1.2. ap18t10aghj-hf.pdf Size:96K _a-power

AP18T10AGH-HF
AP18T10AGH-HF

AP18T10AGH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Simple Drive Requirement BVDSS 100V Ў Lower Gate Charge RDS(ON) 160m? Ў Fast Switching Characteristic ID 9A G Ў Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switchin

3.1. ap18t10gm-hf.pdf Size:94K _a-power

AP18T10AGH-HF
AP18T10AGH-HF

AP18T10GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low Gate Charge D BVDSS 100V Ў Single Drive Requirement RDS(ON) 160m? Ў Surface Mount Package ID 3A G Ў Halogen Free & RoHS Compliant Product S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G S r

3.2. ap18t10gi.pdf Size:94K _a-power

AP18T10AGH-HF
AP18T10AGH-HF

AP18T10GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Fast Switching Performance BVDSS 100V D Ў Single Drive Requirement RDS(ON) 160m? Ў Full Isolation Package ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and c

3.3. ap18t10gh ap18t10gj.pdf Size:96K _a-power

AP18T10AGH-HF
AP18T10AGH-HF

AP18T10GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼ Simple Drive Requirement BVDSS 100V ▼ Lower Gate Charge RDS(ON) 160mΩ ▼ Fast Switching Characteristic ID 9A G S Description G D S TO-252(H) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig

3.4. ap18t10gp.pdf Size:94K _a-power

AP18T10AGH-HF
AP18T10AGH-HF

AP18T10GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Simple Drive Requirement BVDSS 100V Ў Lower Gate Charge RDS(ON) 160m? Ў Fast Switching Characteristic ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos

3.5. ap18t10gh j-hf.pdf Size:97K _a-power

AP18T10AGH-HF
AP18T10AGH-HF

AP18T10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Simple Drive Requirement BVDSS 100V Ў Lower Gate Charge RDS(ON) 160m? Ў Fast Switching Characteristic ID 9A G Ў Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast

Datasheet: AP18P10AGH-HF , AP18P10AGJ-HF , AP18P10GH , AP18P10GJ , AP18P10GI , AP18P10GK-HF , AP18P10GM-HF , AP18P10GS , 2SK3562 , AP18T10AGJ-HF , AP18T10AGK-HF , AP18T10GH-HF , AP18T10GI , AP18T10GJ-HF , AP18T10GM-HF , AP18T10GP , AP18T20GH-HF .

 


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