All MOSFET. 2SK375L Datasheet

 

2SK375L MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK375L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 10 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 1 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 14 nS

Drain-Source Capacitance (Cd): 65 pF

Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm

Package: DPAK

2SK375L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK375L Datasheet (PDF)

4.1. 2sk3758.pdf Size:88K _update

2SK375L
2SK375L

2SK3758 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSⅥ) 2SK3758 unit:mm Switching Regulator Applications 4.7max 4.7 max 10.5 max 10.5max • Low drain-source ON resistance: R = 1.35Ω (typ.) 3.84±0.2 DS (ON) 3.84±0.2 1.3 1.3 • High forward transfer admittance: |Y | = 3.5S (typ.) fs • Low leakage current: I = 100 μA (V = 500 V) DSS

4.2. 2sk3755.pdf Size:295K _update

2SK375L
2SK375L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.3. 2sk3754.pdf Size:145K _toshiba

2SK375L
2SK375L

2SK3754 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3754 Relay Drive, DC-DC Converter and Unit: mm Motor Drive Applications 4.5-V gate drive Low drain-source ON resistance: RDS (ON) = 71 m? (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 10 ?A (max) (VDS = 30 V) Enhancement-model: Vth = 1.3~2.5 V (

4.4. 2sk3756.pdf Size:156K _toshiba

2SK375L
2SK375L

2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high Unit: mm frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this doc

4.5. 2sk3757.pdf Size:250K _toshiba

2SK375L
2SK375L

2SK3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3757 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.9 ? (typ.) High forward transfer admittance: |Yfs| = 1.0 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratin

4.6. 2sk3753-01r.pdf Size:125K _fuji

2SK375L
2SK375L

2SK3753-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings Equivalent circuit

4.7. 2sk375s.pdf Size:45K _hitachi

2SK375L

Datasheet: 2SK368 , 2SK3702 , 2SK373 , 2SK374 , 2SK3740 , 2SK3743 , 2SK3749 , 2SK3756 , 2N5484 , 2SK375S , 2SK3761 , 2SK377 , 2SK3775-01 , 2SK3777-01R , 2SK3778 , AP20N15AGH-HF , AP20N15AGP-HF .

 


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