All MOSFET. AP2422GY Datasheet

 

AP2422GY MOSFET. Datasheet pdf. Equivalent

Type Designator: AP2422GY

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.39 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 4.8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 90 pF

Maximum Drain-Source On-State Resistance (Rds): 0.032 Ohm

Package: 29288

AP2422GY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP2422GY Datasheet (PDF)

1.1. ap2422gy.pdf Size:115K _a-power

AP2422GY
AP2422GY

AP2422GY RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Capable of 2.5V gate drive BVDSS 30V D2 D2 Ў Lower on-resistance RDS(ON) 40m? D1 D1 G2 Ў Surface mount package ID 4.8A S2 G1 S1 2928-8 Description D1 D2 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

5.1. ap2428gn3.pdf Size:173K _a-power

AP2422GY
AP2422GY

AP2428GN3 RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 D2 Ў Bottom Exposed DFN BVDSS 30V D1 D1 Ў Low On-resistance RDS(ON) 27m? Ў Lower Profile ID 5.5A S2 G2 S1 DFN3*3 G1 D2 D1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±10 V ID@TA=25

5.2. ap2426gey-hf.pdf Size:99K _a-power

AP2422GY
AP2422GY

AP2426GEY-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Capable of 2.5V Gate Drive BVDSS 20V D1/D2 Ў Lower on-resistance RDS(ON) 26.5m? G2 Ў Surface Mount Package ID 6A S2 Ў RoHS Compliant & Halogen-Free G1 S1 2928-8 Description D1 D2 Advanced Power MOSFETs utilized advanced processing G1 G2 techniques to achieve the lo

 5.3. ap2428gey.pdf Size:74K _a-power

AP2422GY
AP2422GY

AP2428GEY Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Capable of 2.5V gate drive BVDSS 30V Ў Ў Ў D2 D2 Ў Lower on-resistance RDS(ON) 27m? Ў Ў Ў D1 D1 G2 Ў Surface mount package ID 5.9A Ў Ў Ў S2 Ў RoHS compliant G1 Ў Ў Ў S1 2928-8 Description D1 D2 Advanced Power MOSFETs utilized advanced processing

Datasheet: AP2332GEN-HF , AP2332GN-HF , AP2334GN-HF , AP2338GN-HF , AP2342GK-HF , AP2344GEN-HF , AP2344GN-HF , AP2348GN-HF , BUZ11 , AP2426GEY-HF , AP2428GEY , AP2428GN3 , AP2430GN3-HF , AP2434GN3-HF , 2SK4037 , 2SK404 , 2SK4042 .

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