All MOSFET. AP30T10GI-HF Datasheet

 

AP30T10GI-HF MOSFET. Datasheet pdf. Equivalent

Type Designator: AP30T10GI-HF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 31.3 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 115 pF

Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm

Package: TO220F

AP30T10GI-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP30T10GI-HF Datasheet (PDF)

1.1. ap30t10gi-hf.pdf Size:58K _a-power

AP30T10GI-HF
AP30T10GI-HF

AP30T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 100V Ў Lower On-resistance RDS(ON) 55m? Ў RoHS Compliant & Halogen-Free ID 16A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G resistance a

1.2. ap30t10gi.pdf Size:163K _a-power

AP30T10GI-HF
AP30T10GI-HF

AP30T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 100V ▼ ▼ ▼ ▼ Lower On-resistance RDS(ON) 55mΩ ▼ ▼ ▼ ▼ RoHS Compliant & Halogen-Free ID 16A ▼ ▼ ▼ G S Description AP30T10 series are from Advanced Power innovated design and silicon process technology to achie

2.1. ap30t10gs.pdf Size:167K _a-power

AP30T10GI-HF
AP30T10GI-HF

AP30T10GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 100V ▼ Lower Gate Charge RDS(ON) 55mΩ ▼ Fast Switching Characteristic ID 19A G ▼ RoHS Compliant & Halogen-Free S Description AP30T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest

2.2. ap30t10gp-hf.pdf Size:59K _a-power

AP30T10GI-HF
AP30T10GI-HF

AP30T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 100V Ў Lower Gate Charge RDS(ON) 55m? Ў Fast Switching Characteristic ID 19A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device

2.3. ap30t10gm-hf.pdf Size:58K _a-power

AP30T10GI-HF
AP30T10GI-HF

AP30T10GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 100V D D D Ў Lower Gate Charge RDS(ON) 55m? D Ў Fast Switching Characteristic ID 4.5A G S S Ў Halogen Free & RoHS Compliant S SO-8 D Description AP30T10 series are from Advanced Power innovated design and silicon process technology to a

2.4. ap30t10gh-hf.pdf Size:59K _a-power

AP30T10GI-HF
AP30T10GI-HF

AP30T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 100V Ў Lower Gate Charge RDS(ON) 55m? Ў Fast Switching Characteristic ID 19A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D S TO-252(H) best combination of fast switching,

2.5. ap30t10gh.pdf Size:193K _a-power

AP30T10GI-HF
AP30T10GI-HF

AP30T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 100V ▼ Lower Gate Charge RDS(ON) 55mΩ ▼ Fast Switching Characteristic ID 19A G ▼ RoHS Compliant & Halogen-Free S Description AP30T10 series are from Advanced Power innovated design and G D S TO-252(H) silicon process technology to

2.6. ap30t10gk.pdf Size:132K _a-power

AP30T10GI-HF
AP30T10GI-HF

AP30T10GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement D BVDSS 100V ▼ Lower Gate Charge RDS(ON) 55mΩ ▼ Fast Switching Characteristic ID 4.8A G ▼ Halogen Free & RoHS Compliant Product S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching

2.7. ap30t10gk-hf.pdf Size:60K _a-power

AP30T10GI-HF
AP30T10GI-HF

AP30T10GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 100V Ў Lower Gate Charge RDS(ON) 55m? Ў Fast Switching Characteristic ID 4.8A G Ў Halogen Free & RoHS Compliant Product S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedi

2.8. ap30t10gm.pdf Size:181K _a-power

AP30T10GI-HF
AP30T10GI-HF

AP30T10GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 100V D D D ▼ Lower Gate Charge RDS(ON) 55mΩ D ▼ Fast Switching Characteristic ID3 4.5A G S S ▼ Halogen Free & RoHS Compliant S SO-8 D Description AP30T10 series are from Advanced Power innovated design and silicon process techno

2.9. ap30t10gs-hf.pdf Size:59K _a-power

AP30T10GI-HF
AP30T10GI-HF

AP30T10GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 100V Ў Lower Gate Charge RDS(ON) 55m? Ў Fast Switching Characteristic ID 19A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device

Datasheet: AP30N30W , AP30N30WI , AP30P10GH-HF , AP30P10GI , AP30P10GP-HF , AP30P10GS , AP30T03GH-HF , AP30T10GH-HF , IRFP460 , AP30T10GK-HF , AP30T10GM-HF , AP30T10GP-HF , AP30T10GS-HF , AP3310GH-HF , AP3310GJ-HF , AP3402GEH , AP3402GEJ .

 


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