All MOSFET. FRS430D Datasheet

 

FRS430D MOSFET. Datasheet pdf. Equivalent

Type Designator: FRS430D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 60 nS

Maximum Drain-Source On-State Resistance (Rds): 2.52 Ohm

Package: TO257AA

FRS430D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FRS430D Datasheet (PDF)

4.1. frs430.pdf Size:55K _intersil

FRS430D
FRS430D

FRS430D, FRS430R, FRS430H 3A, 500V, 2.52 Ohm, Rad Hard, June 1998 N-Channel Power MOSFETs Features Package • 3A, 500V, RDS(on) = 2.52Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) •

Datasheet: FRS234H , FRS234R , FRS240D , FRS240H , FRS240R , FRS244D , FRS244H , FRS244R , BF245C , FRS430H , FRS430R , FRS440D , FRS440H , FRS440R , FRS9130D , FRS9130H , FRS9130R .

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