All MOSFET. FSL230D Datasheet

 

FSL230D MOSFET. Datasheet pdf. Equivalent

Type Designator: FSL230D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.46 Ohm

Package: TO205AF

FSL230D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FSL230D Datasheet (PDF)

4.1. fsl230.pdf Size:73K _intersil

FSL230D
FSL230D

FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 200V, rDS(ON) = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S

5.1. irfs23n15d irfb23n15d irfsl23n15d.pdf Size:142K _international_rectifier

FSL230D
FSL230D

PD - 93894A IRFB23N15D IRFS23N15D SMPS MOSFET IRFSL23N15D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.090Ω 23A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Characterized Avalan

5.2. fsl23ao.pdf Size:46K _harris_semi

FSL230D
FSL230D

FSL23AOD, S E M I C O N D U C T O R FSL23AOR Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 6A, 200V, rDS(ON) = 0.350Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs • Total Dose specifically designed for commercial and military space applications. Enhanced Power MOSFE

5.3. fsl23a4.pdf Size:55K _intersil

FSL230D
FSL230D

FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 250V, rDS(ON) = 0.480Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Si

5.4. fsl234.pdf Size:54K _intersil

FSL230D
FSL230D

FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 4A, 250V, rDS(ON) = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S

Datasheet: FSJ9260D , FSJ9260R , FSL110D , FSL110R , FSL130D , FSL130R , FSL13AOD , FSL13AOR , IRFB3306 , FSL230R , FSL234D , FSL234R , FSL23A4D , FSL23A4R , FSL23AOD , FSL23AOR , FSL430D .

 


FSL230D
  FSL230D
  FSL230D
 

social 

LIST

Last Update

MOSFET: IRLL2703PBF | IRLL110TRPBF | IRLL024ZPBF | IRLL024NPBF | IRLL014PBF | IRLL014NPBF | IRLL3303PBF | IRLL2705PBF | IRF200B211 | IRF1902PBF | IRF1704 | IRF1607PBF | IRF150SMD | IRF150C | IRF150B |