All MOSFET. FSS23AOR Datasheet

 

FSS23AOR MOSFET. Datasheet pdf. Equivalent

Type Designator: FSS23AOR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 56 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.33 Ohm

Package: TO257AA

FSS23AOR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FSS23AOR Datasheet (PDF)

3.1. fss23ao.pdf Size:45K _harris_semi

FSS23AOR
FSS23AOR

FSS23AOD, S E M I C O N D U C T O R FSS23AOR Radiation Hardened, SEGR Resistant February 1998 N-Channel Power MOSFETs Features Description • 9A, 200V, rDS(ON) = 0.330Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs • Total Dose specifically designed for commercial and military space applications. Enhanced Power MOSFET

4.1. fss23a4.pdf Size:46K _intersil

FSS23AOR
FSS23AOR

FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, June 1998 SEGR Resistant, N-Channel Power MOSFETs Features Description • 7A, 250V, rDS(ON) = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Si

5.1. fss237.pdf Size:158K _sanyo

FSS23AOR
FSS23AOR

Ordering number:ENN6149 N-Channel Silicon MOSFET FSS237 Load Switching Applications Features Package Dimensions Ultralow ON resistance. unit:mm 2.5V drive. 2116 [FSS237] 8 5 1 : Source 2 : Source 14 3 : Source 0.2 5.0 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.595 1.27 0.43 Specifications SANYO : SOP8 Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Co

5.2. fss234.pdf Size:29K _sanyo

FSS23AOR
FSS23AOR

Ordering number : ENN6865 FSS234 N-Channel Silicon MOSFET FSS234 DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit : mm 4.0V drive. 2116 Ultrahigh-speed switching. [FSS234] 85 1 : Source 2 : Source 3 : Source 14 0.2 4 : Gate 5.0 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.595 1.27 0.43 SANYO : SOP8 Specifications Absolute Maximum Rating

5.3. fss232.pdf Size:42K _sanyo

FSS23AOR
FSS23AOR

Ordering number:ENN6359 N-Channel Silicon MOSFET FSS232 Load Switching Applications Features Package Dimensions Low ON resistance. unit:mm 4V drive. 2116 [FSS232] 8 5 1 : Source 2 : Source 14 0.2 3 : Source 5.0 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.595 1.27 0.43 SANYO : SOP8 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditio

5.4. fss238.pdf Size:72K _sanyo

FSS23AOR
FSS23AOR

Ordering number:ENN6401 N-Channel Silicon MOSFET FSS238 Load Switching Applications Features Package Dimensions Low ON resistance. unit:mm 4V drive. 2116 [FSS238] 8 5 1 : Source 2 : Source 14 3 : Source 0.2 5.0 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.595 1.27 0.43 Specifications SANYO : SOP8 Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Condition

5.5. fss239.pdf Size:28K _sanyo

FSS23AOR
FSS23AOR

Ordering number : ENN6582 FSS239 N-Channel Silicon MOSFET FSS239 Load Switching Applications Features Package Dimensions Low ON resistance. unit : mm 2.5V drive. 2185 [FSS239] 85 1 : No Contact 2 : Source 3 : Source 14 0.2 4 : Gate 5.0 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.595 1.27 0.43 SANYO : SOP8 Specifications Absolute Maximum Ratings at Ta=25C Parameter S

5.6. fss230.pdf Size:46K _intersil

FSS23AOR
FSS23AOR

FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 8A, 200V, rDS(ON) = 0.440Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (S

5.7. fss234.pdf Size:45K _intersil

FSS23AOR
FSS23AOR

FSS234D, FSS234R 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 6A, 250V, rDS(ON) = 0.600Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifi- • Total Dose cally designed for commercial and military space applications. - Meets Pre-RAD Specifications to 100K R

Datasheet: FSS13AOR , FSS230D , FSS230R , FSS234D , FSS234R , FSS23A4D , FSS23A4R , FSS23AOD , J112 , FSS430D , FSS430R , FSS9130D , FSS9130R , FSS913AOD , FSS913AOR , FSS9230D , FSS9230R .

 


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