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AOU7S65 Specs and Replacement


   Type Designator: AOU7S65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO-251
 

 AOU7S65 substitution

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AOU7S65 Specs

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AOU7S65

AOD7S65/AOU7S65/AOI7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOD7S65 & AOU7S65 & AOI7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low RD... See More ⇒

 ..2. Size:274K  inchange semiconductor
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AOU7S65

isc N-Channel MOSFET Transistor AOU7S65 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R =0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

 8.1. Size:289K  aosemi
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AOU7S65

AOD7S60/AOU7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOD7S60 & AOU7S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 33A designed to deliver high levels of performance and RDS(ON),max 0.6 robustness in switching applications. Qg,typ 8.2nC By providing low RDS(on), Qg and EOSS ... See More ⇒

Detailed specifications: AOTF9N90 , AOU1N60 , AOU2N60 , AOU2N60A , AOU3N50 , AOU3N60 , AOU4N60 , AOU4S60 , IRF9640 , AOV11S60 , AOV15S60 , AOV20S60 , AOW10N60 , AOW10N65 , AOW10T60P , AOW11N60 , AOW11S60 .

Keywords - AOU7S65 MOSFET specs

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