All MOSFET. AOU7S65 Datasheet

 

AOU7S65 MOSFET. Datasheet pdf. Equivalent

Type Designator: AOU7S65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 89 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 14 nS

Drain-Source Capacitance (Cd): 30 pF

Maximum Drain-Source On-State Resistance (Rds): 0.65 Ohm

Package: TO-251

AOU7S65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOU7S65 Datasheet (PDF)

0.1. aou7s65.pdf Size:358K _aosemi

AOU7S65
AOU7S65

AOD7S65/AOU7S65/AOI7S65 TM 650V 7A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOD7S65 & AOU7S65 & AOI7S65 have been fabricated using the advanced αMOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65Ω performance and robustness in switching applications. Qg,typ 9.2nC By providing low RD

8.1. aou7s60.pdf Size:289K _aosemi

AOU7S65
AOU7S65

AOD7S60/AOU7S60 TM 600V 7A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOD7S60 & AOU7S60 have been fabricated using the advanced αMOSTM high voltage process that is IDM 33A designed to deliver high levels of performance and RDS(ON),max 0.6Ω robustness in switching applications. Qg,typ 8.2nC By providing low RDS(on), Qg and EOSS

 

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