AOU7S65 Datasheet and Replacement
Type Designator: AOU7S65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 30 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO-251
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AOU7S65 Datasheet (PDF)
aou7s65.pdf

AOD7S65/AOU7S65/AOI7S65TM650V 7A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOD7S65 & AOU7S65 & AOI7S65 have beenfabricated using the advanced MOSTM high voltage IDM 30Aprocess that is designed to deliver high levels of RDS(ON),max 0.65performance and robustness in switching applications. Qg,typ 9.2nCBy providing low RD
aou7s65.pdf

isc N-Channel MOSFET Transistor AOU7S65FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
aou7s60.pdf

AOD7S60/AOU7S60TM600V 7A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOD7S60 & AOU7S60 have been fabricated usingthe advanced MOSTM high voltage process that is IDM 33Adesigned to deliver high levels of performance and RDS(ON),max 0.6robustness in switching applications. Qg,typ 8.2nCBy providing low RDS(on), Qg and EOSS
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: FCPF7N60YDTU | SPD04N60S5 | SM6A12NSFP | AP6679GI-HF
Keywords - AOU7S65 MOSFET datasheet
AOU7S65 cross reference
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History: FCPF7N60YDTU | SPD04N60S5 | SM6A12NSFP | AP6679GI-HF



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