All MOSFET. HUF76129D3S Datasheet

 

HUF76129D3S MOSFET. Datasheet pdf. Equivalent

Type Designator: HUF76129D3S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 105 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: TO252AA

HUF76129D3S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HUF76129D3S Datasheet (PDF)

1.1. huf76129d3-s.pdf Size:116K _intersil

HUF76129D3S
HUF76129D3S

HUF76129D3, HUF76129D3S Data Sheet September 1999 File Number 4394.5 20A, 30V, 0.016 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs • Logic Level Gate Drive These N-Channel power MOSFETs • 20A, 30V are manufactured using the • Ultra Low On-Resistance, rDS(ON) = 0.016Ω innovative UltraFET™ process. This advanced process technology • Temperature Compensating PS

2.1. huf76129p3-s3s.pdf Size:118K _intersil

HUF76129D3S
HUF76129D3S

HUF76129P3, HUF76129S3S Data Sheet September 1999 File Number 4395.6 56A, 30V, 0.016 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs • Logic Level Gate Drive These N-Channel power MOSFETs • 56A, 30V are manufactured using the • Ultra Low On-Resistance, rDS(ON) = 0.016Ω innovative UltraFET™ process. This advanced process technology • Temperature Compensating PS

 3.1. huf76121d3.pdf Size:160K _fairchild_semi

HUF76129D3S
HUF76129D3S

HUF76121D3, HUF76121D3S Data Sheet December 2001 20A, 30V, 0.023 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs • Logic Level Gate Drive These N-Channel power MOSFETs • 20A, 30V are manufactured using the • Ultra Low On-Resistance, rDS(ON) = 0.023Ω innovative UltraFET™ process. This advanced process technology • Temperature Compensating PSPICE® Model ac

3.2. huf76121p3-s3s.pdf Size:114K _intersil

HUF76129D3S
HUF76129D3S

HUF76121P3, HUF76121S3S Data Sheet September 1999 File Number 4392.8 47A, 30V, 0.021 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs • Logic Level Gate Drive These N-Channel power MOSFETs • 47A, 30V are manufactured using the • Ultra Low On-Resistance, rDS(ON) = 0.021Ω innovative UltraFET™ process. This advanced process technology • Temperature Compensating PS

 3.3. huf76121sk8.pdf Size:134K _intersil

HUF76129D3S
HUF76129D3S

HUF76121SK8 Data Sheet April 1999 File Number 4737 8A, 30V, 0.023 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET • Logic Level Gate Drive This N-Channel power MOSFET is • 8A, 30V manufactured using the innovative • Simulation Models UltraFET™ process. This advanced - Temperature Compensated PSPICE™ and SABER© process technology achieves the Electrical Models

Datasheet: HUF76113SK8 , HUF76113T3ST , HUF76121D3 , HUF76121D3S , HUF76121P3 , HUF76121S3S , HUF76121SK8 , HUF76129D3 , IRF540N , HUF76129P3 , HUF76129S3S , HUF76131SK8 , HUF76132P3 , HUF76132S3S , HUF76132SK8 , HUF76137P3 , HUF76137S3S .

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