BRF8N80
MOSFET. Datasheet pdf. Equivalent
Type Designator: BRF8N80
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 130
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 120
nS
Cossⓘ -
Output Capacitance: 160
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.25
Ohm
Package:
TO220FL
BRF8N80
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRF8N80
Datasheet (PDF)
..1. Size:1047K blue-rocket-elect
brf8n80.pdf 
BRF8N80(BRCS8N80FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ,,Low gate charge, Low Crss , Fast switching. / Applications DC/DC These devices are well suited for h
9.1. Size:781K blue-rocket-elect
brf8n60.pdf
BRF8N60(BRCS8N60FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ,,Low gate charge, Low Crss , Fast switching. / Applications DC/DC These devices are well suited for h
9.2. Size:979K blue-rocket-elect
brf8n65.pdf
BRF8N65(BRCS8N65FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hi
Datasheet: IRFP360LC
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