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MTD6P10ET4 Spec and Replacement


   Type Designator: MTD6P10ET4
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 32.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.279 Ohm
   Package: TO251 TO252

 MTD6P10ET4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTD6P10ET4 Specs

 ..1. Size:865K  cn vbsemi
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MTD6P10ET4

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 6.1. Size:261K  motorola
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MTD6P10ET4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6P10E/D Designer's Data Sheet MTD6P10E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 6.0 AMPERES 100 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.66 OHM energy in the avalanche a... See More ⇒

 6.2. Size:206K  onsemi
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MTD6P10ET4

MTD6P10E Preferred Device Power MOSFET 6 Amps, 100 Volts P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor control... See More ⇒

Detailed specifications: SMC3407S , CS6N80A0H , SI9945AEY-T1-E3 , SI9945BDY-T1 , SI9945DY , CS6N90A8H , NCE2305A , NCE3007S , 5N60 , MMSF7P03HDR2G , CS730A8H , SPN3400S23RG , CS730FA9H , CS730FA9RD , CS740A0H , CS120N08A8 , SSC8033GS6 .

History: IPP111N15N3 | RJK1001DPP-E0 | IPP111N15N3G | SSF11NS65UD | HM85P02 | SQM85N10-10 | UPA1763G

Keywords - MTD6P10ET4 MOSFET specs

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