All MOSFET. IRF7807 Datasheet

 

IRF7807 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF7807

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 8.3 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: SO8

IRF7807 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF7807 Datasheet (PDF)

1.1. irf7807.pdf Size:239K _international_rectifier

IRF7807
IRF7807

PD – 91747C IRF7807/IRF7807A HEXFET® Chip-Set for DC-DC Converters • N Channel Application Specific MOSFETs A • Ideal for Mobile DC-DC Converters 1 8 S D • Low Conduction Losses 2 7 S D • Low Switching Losses 3 6 S D Description 4 5 G D These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented SO-8 Top View balance of on-resistance and gate cha

1.2. irf7807vd1.pdf Size:117K _international_rectifier

IRF7807
IRF7807

PD-94078 IRF7807VD1 FETKY™ MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET? Power MOSFET 1 8 and Schottky Diode A/S K/D • Ideal for Synchronous Rectifiers in DC-DC 2 7 A/S K/D Converters Up to 5A Output 3 6 A/S K/D • Low Conduction Losses 4 5 • Low Switching Losses G K/D D • Low Vf Schottky Rectifier Top View Description SO-8 The FETKY™ family of Co-Pack HEXFET?MOSFETs and

1.3. irf7807vd2.pdf Size:115K _international_rectifier

IRF7807
IRF7807

PD-94079 IRF7807VD2 FETKY™ MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET? Power MOSFET 1 8 and Schottky Diode A/S K/D • Ideal for Synchronous Rectifiers in DC-DC 2 7 A/S K/D Converters Up to 5A Output 3 6 A/S K/D • Low Conduction Losses 4 5 • Low Switching Losses G K/D D • Low Vf Schottky Rectifier Top View Description SO-8 The FETKY™ family of Co-Pack HEXFET?MOSFETs and

1.4. irf7807d1.pdf Size:165K _international_rectifier

IRF7807
IRF7807

PD- 93761 IRF7807D1 FETKY™ MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET? Power MOSFET 1 8 A/S K/D and Schottky Diode 2 7 A/S K/D • Ideal for Synchronous Rectifiers in DC-DC 3 6 Converters Up to 5A Output A/S K/D • Low Conduction Losses 4 5 G K/D • Low Switching Losses D • Low Vf Schottky Rectifier SO-8 Top View Description The FETKY™ family of Co-Pack HEXFET?MOSFETs an

1.5. irf7807v.pdf Size:159K _international_rectifier

IRF7807
IRF7807

PD-94108 IRF7807V • N Channel Application Specific MOSFET • Ideal for Mobile DC-DC Converters • Low Conduction Losses A • Low Switching Losses 1 8 S D 2 7 Description S D This new device employs advanced HEXFET Power 3 6 S D MOSFET technology to achieve an unprecedented 4 5 balance of on-resistance and gate charge. The G D reduction of conduction and switching losses makes it id

1.6. irf7807d2.pdf Size:134K _international_rectifier

IRF7807
IRF7807

PD- 93762 IRF7807D2 FETKY™ MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET? Power MOSFET 1 8 A/S K/D and Schottky Diode 2 7 A/S K/D • Ideal for Synchronous Rectifiers in DC-DC 3 6 Converters up to 5A Output A/S K/D • Low Conduction Losses 4 5 G K/D • Low Switching Losses D • Low Vf Schottky Rectifier SO-8 Top View Description The FETKY™ family of Co-Pack HEXFET? MOSFETs

1.7. irf7807z.pdf Size:261K _international_rectifier

IRF7807
IRF7807

PD - 94707A IRF7807Z HEXFET® Power MOSFET Applications VDSS RDS(on) max Qg(typ.) l Control FET for Notebook Processor Power 13.8m:@VGS = 10V 30V 7.2nC l Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l

Datasheet: IRF7526D1 , IRF7555 , IRF7601 , IRF7603 , IRF7604 , IRF7606 , IRF7663 , IRF7805 , BSS138 , IRF7809 , IRF7811 , IRF820 , IRF820A , IRF820AL , IRF820AS , IRF820FI , IRF820S .

 


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