All MOSFET. IRFD9210 Datasheet

 

IRFD9210 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFD9210

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.3 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 0.4 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 3 Ohm

Package: HEXDIP

IRFD9210 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFD9210 Datasheet (PDF)

1.1. irfd9210.pdf Size:171K _international_rectifier

IRFD9210
IRFD9210

1.2. irfd9210pbf.pdf Size:1772K _international_rectifier

IRFD9210
IRFD9210

PD- 95934 IRFD9210PbF Lead-Free 10/28/04 Document Number: 91140 www.vishay.com 1 IRFD9210PbF Document Number: 91140 www.vishay.com 2 IRFD9210PbF Document Number: 91140 www.vishay.com 3 IRFD9210PbF Document Number: 91140 www.vishay.com 4 IRFD9210PbF Document Number: 91140 www.vishay.com 5 IRFD9210PbF Document Number: 91140 www.vishay.com 6 IRFD9210PbF Peak Diode Recove

1.3. irfd9210 sihfd9210.pdf Size:1552K _vishay

IRFD9210
IRFD9210

IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 3.0 RoHS* For Automatic Insertion Qg (Max.) (nC) 8.9 COMPLIANT End Stackable Qgs (nC) 2.1 P-Channel Qgd (nC) 3.9 Fast Switching Configuration Single Ease of Paralleling S Compliant to RoHS Dir

Datasheet: IRFD224 , IRFD310 , IRFD320 , IRFD420 , IRFD9014 , IRFD9024 , IRFD9110 , IRFD9120 , IRF840 , IRFD9220 , IRFDC20 , IRFE024 , IRFE110 , IRFE120 , IRFE130 , IRFE210 , IRFE220 .

 


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