AP65SL190AIN
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP65SL190AIN
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 34.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 55
nC
trⓘ - Rise Time: 29
nS
Cossⓘ -
Output Capacitance: 62
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19
Ohm
Package: TO220F-NL
AP65SL190AIN
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP65SL190AIN
Datasheet (PDF)
..1. Size:256K ape
ap65sl190ain.pdf
AP65SL190AINHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190A series are from Advanced Power innovated designand silicon process technology to ac
3.1. Size:219K ape
ap65sl190ai.pdf
AP65SL190AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3,4 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190A series are from Advanced Power innovated designand silicon process technology to ach
4.1. Size:201K ape
ap65sl190awl.pdf
AP65SL190AWLHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190A series are from Advanced Power innovated design andsilicon process technology to achi
4.2. Size:166K ape
ap65sl190ap.pdf
AP65SL190APHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 700VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190A series are from Advanced Power innovated design andsilicon process technology to achie
4.3. Size:169K ape
ap65sl190ar.pdf
AP65SL190ARHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 650VD Fast Switching Characteristic RDS(ON) 0.19 Simple Drive Requirement ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP65SL190A series are from Advanced Power innovated design andsilicon process technology to achieve the l
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