AP13P15GS MOSFET. Datasheet pdf. Equivalent
Type Designator: AP13P15GS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 96 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 13 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 21 nS
Drain-Source Capacitance (Cd): 220 pF
Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm
Package: TO263
AP13P15GS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP13P15GS Datasheet (PDF)
1.1. ap13p15gs p-hf.pdf 
Size:62K _a-power
AP13P15GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Simple Drive Requirement BVDSS -150V Ў Fast Switching Characteristic RDS(ON) 300m? Ў RoHS Compliant & Halogen-Free ID -13A G S Description Advanced Power MOSFETs from APEC provide the designer with the G best combination of fast switching, ruggedized device design, low o
1.2. ap13p15gp ap13p15gs.pdf Size:72K _a-power
AP13P15GS/P Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D ▼Lower On-resistance BVDSS -150V ▼ ▼ ▼ ▼Simple Drive Requirement RDS(ON) 300mΩ ▼ ▼ ▼ ▼Fast Switching Characteristic ID -13A ▼ ▼ ▼ G ▼ RoHS Compliant ▼ ▼ ▼ S Description The Advanced Power MOSFETs from APEC provide the G D
2.1. ap13p15gj-hf.pdf Size:100K _a-power
AP13P15GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Lower On-resistance BVDSS -150V Ў Simple Drive Requirement RDS(ON) 300m? Ў Fast Switching Characteristic ID -13A G Ў RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for all commercial-industrial G D surface mount applications and sui
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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