All MOSFET. IRFN250 Datasheet

 

IRFN250 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFN250

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 22 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 3500 pF

Maximum Drain-Source On-State Resistance (Rds): 0.105 Ohm

Package: TO220SM

IRFN250 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFN250 Datasheet (PDF)

1.1. irfn250.pdf Size:155K _international_rectifier

IRFN250
IRFN250

PD - 91549C IRFN250 JANTX2N7225U JANTXV2N7225U POWER MOSFET REF:MIL-PRF-19500/592 SURFACE MOUNT(SMD-1) 200V, N-CHANNEL ® Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN250 0.100 ? 27.4A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistan

5.1. irfn240.pdf Size:167K _international_rectifier

IRFN250
IRFN250

PD - 91548C IRFN240 JANTX2N7219U JANTXV2N7219U POWER MOSFET REF:MIL-PRF-19500/596 SURFACE MOUNT(SMD-1) 200V, N-CHANNEL ® Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN240 0.18 ? 18A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance

Datasheet: IRFM9140 , IRFM9240 , IRFN044 , IRFN054 , IRFN130 , IRFN140 , IRFN150 , IRFN240 , 2SK3568 , IRFN340 , IRFN350 , IRFN440 , IRFN450 , IRFN9130 , IRFN9130SMD , IRFN9140 , IRFN9140SMD .

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