IXTK120P20T MOSFET. Datasheet pdf. Equivalent

   Type Designator: IXTK120P20T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1040 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 740 nC
   trⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 2550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO-264

IXTK120P20T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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