All MOSFET. IRFP331 Datasheet

 

IRFP331 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP331

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 350 V

Maximum Drain Current |Id|: 5.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO3P

IRFP331 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP331 Datasheet (PDF)

4.1. irfp3306pbf.pdf Size:296K _upd-mosfet

IRFP331
IRFP331

PD - 97128 IRFP3306PbF HEXFET® Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m : l Uninterruptible Power Supply l High Speed Power Switching max. 4.2m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt R

4.2. irfp330-333 irf730-733.pdf Size:329K _samsung

IRFP331
IRFP331



 5.1. irfp360pbf.pdf Size:965K _upd-mosfet

IRFP331
IRFP331

IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rated VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.20 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT • Fast Switching Qgs (nC) 30 Qgd (nC) 110 • Ease of Paralleling Configuration Single • Simple Drive Requirements • Lead (

5.2. irfp350r.pdf Size:62K _upd-mosfet

IRFP331
IRFP331

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP350R FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATI

 5.3. irfp32n50k irfp32n50kpbf.pdf Size:175K _upd-mosfet

IRFP331
IRFP331

IRFP32N50K, SiHFP32N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (Ω)VGS = 10 V 0.135 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 190 COMPLIANT Ruggedness Qgs (nC) 59 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 84 and Current Con

5.4. irfp3415pbf.pdf Size:161K _upd-mosfet

IRFP331
IRFP331

PD - 95512 IRFP3415PbF HEXFET® Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 150V l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.042Ω G l Lead-Free ID = 43A S Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resi

 5.5. irfp350cf.pdf Size:167K _upd-mosfet

IRFP331



5.6. irfp3206pbf.pdf Size:297K _upd-mosfet

IRFP331
IRFP331

PD - 97127 IRFP3206PbF HEXFET® Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.4m : l Uninterruptible Power Supply l High Speed Power Switching max. 3.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 200A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D

5.7. irfp340r.pdf Size:62K _upd-mosfet

IRFP331
IRFP331

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP340R FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

5.8. irfp341r.pdf Size:62K _upd-mosfet

IRFP331
IRFP331

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP341R FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

5.9. irfp353r.pdf Size:162K _upd-mosfet

IRFP331
IRFP331

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP353(R) FEATURES ·Drain Current –I = 13A@ T =25℃ D C ·Drain Source Voltage- : V = 350V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.4Ω(Max) DS(on) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS

5.10. irfp351r.pdf Size:163K _upd-mosfet

IRFP331
IRFP331

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP351(R) FEATURES ·Drain Current –I = 13A@ T =25℃ D C ·Drain Source Voltage- : V = 350V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.3Ω(Max) DS(on) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS

5.11. irfp342r.pdf Size:62K _upd-mosfet

IRFP331
IRFP331

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP342R FEATURES ·Drain Current –ID= 8.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.80Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA

5.12. irfp343r.pdf Size:62K _upd-mosfet

IRFP331
IRFP331

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP343R FEATURES ·Drain Current –ID= 8.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.80Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RA

5.13. irfp3710pbf.pdf Size:229K _upd-mosfet

IRFP331
IRFP331

PD - 95053A IRFP3710PbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.025Ω G l Lead-Free Description ID = 57A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili

5.14. irfp360 irfp362.pdf Size:634K _upd-mosfet

IRFP331
IRFP331



5.15. irfp3077pbf.pdf Size:299K _upd-mosfet

IRFP331
IRFP331

PD - 97126 IRFP3077PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 2.8m : l Hard Switched and High Frequency Circuits max. 3.3m : Benefits G l Worldwide Best RDS(on) in TO-247 ID (Silicon Limited) 200A c l Improved Gate, Avalanche and Dynamic dV/d

5.16. irfp350pbf.pdf Size:1571K _upd-mosfet

IRFP331
IRFP331

IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.30 RoHS* • Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 150 • Fast Switching Qgs (nC) 23 • Ease of Paralleling Qgd (nC) 80 • Simple Drive Requirements Configuration Single • Lead

5.17. irfp3006.pdf Size:361K _upd-mosfet

IRFP331
IRFP331

IRFP3006PbF VDSS 60V D RDS(on) typ. 2.1m max. 2.5m S G D 270A ID (Silicon Limited) G ID (Package Limited) 195A S TO-247AC Applications G D S  High Efficiency Synchronous Rectification in SMPS Gate Drain Source  Uninterruptible Power Supply  High Speed Power Switching  Hard Switched and High Frequency Circuits Benefits  Improved

5.18. irfp340pbf.pdf Size:1554K _upd-mosfet

IRFP331
IRFP331

IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 • Repetitive Avalanche Rated Available RDS(on) (Ω)VGS = 10 V 0.55 • Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 62 COMPLIANT • Fast Switching Qgs (nC) 10 • Ease of Paralleling Qgd (nC) 30 • Simple Drive Requirements Configuration Single • Compliant

5.19. irfp344pbf.pdf Size:2010K _upd-mosfet

IRFP331
IRFP331

IRFP344, SiHFP344 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 450 • Repetitive Avalanche Rated RoHS RDS(on) (Ω)VGS = 10 V 0.63 COMPLIANT • Isolated Central Mounting Hole Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 12 • Ease of Paralleling Qgd (nC) 41 • Simple Drive Requirements Configuration Single • Lead (Pb)-free D

5.20. irfp31n50l irfp31n50lpbf.pdf Size:192K _upd-mosfet

IRFP331
IRFP331

IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Super Fast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ()VGS = 10 V 0.15 RoHS* • Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 210 COMPLIANT Requirements Qgs (nC) 58 • Enhanced dV/dt Capabilities Offer Improved Ruggedness

5.21. irfp350lcpbf.pdf Size:1495K _upd-mosfet

IRFP331
IRFP331

PD- 95714 IRFP350LCPbF • Lead-Free 08/03/04 Document Number: 91224 www.vishay.com 1 Downloaded from Elcodis.com electronic components distributor IRFP350LCPbF Document Number: 91224 www.vishay.com 2 Downloaded from Elcodis.com electronic components distributor IRFP350LCPbF Document Number: 91224 www.vishay.com 3 Downloaded from Elcodis.com electronic components distributor

5.22. irfp354pbf.pdf Size:1795K _upd-mosfet

IRFP331
IRFP331

PD- 95715 IRFP354PbF • Lead-Free www.irf.com 1 8/3/04 IRFP354PbF 2 www.irf.com IRFP354PbF www.irf.com 3 IRFP354PbF 4 www.irf.com IRFP354PbF www.irf.com 5 IRFP354PbF 6 www.irf.com IRFP354PbF www.irf.com 7 IRFP354PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WITH ASSEMBLY PART

5.23. irfp352r.pdf Size:162K _upd-mosfet

IRFP331
IRFP331

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP352(R) FEATURES ·Drain Current –I = 13A@ T =25℃ D C ·Drain Source Voltage- : V = 400V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.4Ω(Max) DS(on) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS

5.24. irfp3703pbf.pdf Size:214K _upd-mosfet

IRFP331
IRFP331

PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l Synchronous Rectification 30V 0.0028Ω 210A† l Active ORing l Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 1

5.25. irfp350fi.pdf Size:407K _st2

IRFP331
IRFP331

5.26. irfp350a.pdf Size:232K _fairchild_semi

IRFP331
IRFP331

IRFP350A FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.3? Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current: 10A (Max.) @ VDS = 400V Low RDS(ON): 0.254? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS D

5.27. irfp32n50ks.pdf Size:115K _international_rectifier

IRFP331
IRFP331

PD - 94360 IRFP32N50KS SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply (SMPS) VDSS RDS(on)typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.135? 32A Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capa

5.28. irfp32n50k.pdf Size:94K _international_rectifier

IRFP331
IRFP331

PD - 94099A IRFP32N50K SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply (SMPS) VDSS RDS(on)typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.135? 32A Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capa

5.29. irfp31n50l.pdf Size:95K _international_rectifier

IRFP331
IRFP331

PD - 94081 SMPS MOSFET IRFP31N50L Applications HEXFET Power MOSFET Switch Mode Power Supply (SMPS) UninterruptIble Power Supply VDSS RDS(on) typ. ID High Speed Power Switching 500V 0.15? 31A ZVS and High Frequency Circuit PWM Inverters Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capa

5.30. irfp3710.pdf Size:185K _international_rectifier

IRFP331
IRFP331

PD-91490C IRFP3710 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175C Operating Temperature Fast Switching RDS(on) = 0.025W Fully Avalanche Rated G ID = 57A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, com

5.31. irfp31n50lpbf.pdf Size:208K _international_rectifier

IRFP331
IRFP331

PD - 95051 SMPS MOSFET IRFP31N50LPbF AppIications HEXFET Power MOSFET Trr typ. VDSS RDS(on) typ. ID 500V 0.15? 170ns 31A Features and Benefits

5.32. irfp354.pdf Size:204K _international_rectifier

IRFP331
IRFP331

5.33. irfp340pbf.pdf Size:1801K _international_rectifier

IRFP331
IRFP331

PD- 95712 IRFP340PbF Lead-Free 8/2/04 Document Number: 91222 www.vishay.com 1 IRFP340PbF Document Number: 91222 www.vishay.com 2 IRFP340PbF Document Number: 91222 www.vishay.com 3 IRFP340PbF Document Number: 91222 www.vishay.com 4 IRFP340PbF Document Number: 91222 www.vishay.com 5 IRFP340PbF Document Number: 91222 www.vishay.com 6 IRFP340PbF Peak Diode Recovery dv/dt

5.34. irfp344pbf.pdf Size:1774K _international_rectifier

IRFP331
IRFP331

PD- 95713 IRFP344PbF Lead-Free 8/2/04 Document Number: 91223 www.vishay.com 1 IRFP344PbF Document Number: 91223 www.vishay.com 2 IRFP344PbF Document Number: 91223 www.vishay.com 3 IRFP344PbF Document Number: 91223 www.vishay.com 4 IRFP344PbF Document Number: 91223 www.vishay.com 5 IRFP344PbF Document Number: 91223 www.vishay.com 6 IRFP344PbF Document Number: 91223 www

5.35. irfp360.pdf Size:153K _international_rectifier

IRFP331
IRFP331

Document Number: 90292 www.vishay.com 1001 www.vishay.com Document Number: 90292 1002 Document Number: 90292 www.vishay.com 1003 Document Number: 90292 www.vishay.com 1004 Document Number: 90292 www.vishay.com 1005 Document Number: 90292 www.vishay.com 1006 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as

5.36. irfp350lcpbf.pdf Size:1471K _international_rectifier

IRFP331
IRFP331

PD- 95714 IRFP350LCPbF Lead-Free 08/03/04 Document Number: 91224 www.vishay.com 1 IRFP350LCPbF Document Number: 91224 www.vishay.com 2 IRFP350LCPbF Document Number: 91224 www.vishay.com 3 IRFP350LCPbF Document Number: 91224 www.vishay.com 4 IRFP350LCPbF Document Number: 91224 www.vishay.com 5 IRFP350LCPbF Document Number: 91224 www.vishay.com 6 IRFP350LCPbF Document N

5.37. irfp32n50kpbf.pdf Size:202K _international_rectifier

IRFP331
IRFP331

PD - 95052 IRFP32N50KPbF SMPS MOSFET HEXFET Power MOSFET AppIications l Switch Mode Power Supply (SMPS) VDSS RDS(on)typ. ID l Uninterruptible Power Supply l High Speed Power Switching 500V 0.135? 32A l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l F

5.38. irfp350lc.pdf Size:160K _international_rectifier

IRFP331
IRFP331

PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 400V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.30? Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 16A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFE

5.39. irfp340.pdf Size:172K _international_rectifier

IRFP331
IRFP331

5.40. irfp344.pdf Size:202K _international_rectifier

IRFP331
IRFP331

5.41. irfp3703.pdf Size:236K _international_rectifier

IRFP331
IRFP331

PD - 93917A IRFP3703 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID Synchronous Rectification 30V 0.0028? 210A Active ORing Benefits Ultra Low On-Resistance Low Gate Impedance to Reduce Switching Losses Fully Avalanche Rated TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V 210 ID @ TC = 100C Cont

5.42. irfp350.pdf Size:872K _international_rectifier

IRFP331
IRFP331

PD - 94877 IRFP350PbF Lead-Free 12/9/03 Document Number: 91225 www.vishay.com 1 IRFP350PbF Document Number: 91225 www.vishay.com 2 IRFP350PbF Document Number: 91225 www.vishay.com 3 IRFP350PbF Document Number: 91225 www.vishay.com 4 IRFP350PbF Document Number: 91225 www.vishay.com 5 IRFP350PbF Document Number: 91225 www.vishay.com 6 IRFP350PbF TO-247AC Package Outline

5.43. irfp3415.pdf Size:92K _international_rectifier

IRFP331
IRFP331

PD - 93962 IRFP3415 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 150V 175C Operating Temperature Fast Switching RDS(on) = 0.042? Fully Avalanche Rated G Description ID = 43A S Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Thi

5.44. irfp360lc.pdf Size:162K _international_rectifier

IRFP331
IRFP331

PD - 9.1230 IRFP360LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 400V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.20? Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 23A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFE

5.45. irfp350-353.pdf Size:220K _samsung

IRFP331
IRFP331

 This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.

5.46. irfp350a.pdf Size:985K _samsung

IRFP331
IRFP331

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology ? RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

5.47. irfp340-343 irf740-743.pdf Size:191K _samsung

IRFP331
IRFP331



5.48. irfp340a.pdf Size:933K _samsung

IRFP331
IRFP331

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

5.49. irfp350 sihfp350.pdf Size:1574K _vishay

IRFP331
IRFP331

IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.30 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 150 Fast Switching Qgs (nC) 23 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Compliant to RoHS Direct

5.50. irfp31n50l sihfp31n50l.pdf Size:188K _vishay

IRFP331
IRFP331

IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Super Fast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) (?)VGS = 10 V 0.15 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 210 COMPLIANT Requirements Qgs (nC) 58 Enhanced dV/dt Capabilities Offer Improved Ruggedness Qgd (nC) 10

5.51. irfp32n50k sihfp32n50k.pdf Size:170K _vishay

IRFP331
IRFP331

IRFP32N50K, SiHFP32N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (?)VGS = 10 V 0.135 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 190 COMPLIANT Ruggedness Qgs (nC) 59 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 84 and Current Configuration

5.52. irfp360lc sihfp360lc.pdf Size:1031K _vishay

IRFP331
IRFP331

IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.20 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 110 Isolated Central Mounting Hole Qgs (nC) 28 Dynamic dV/dt Rated Qgd (nC) 45 Repetitive Avalanche Rated Co

5.53. irfp360 sihfp360.pdf Size:995K _vishay

IRFP331
IRFP331

IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rated VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.20 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 30 Ease of Paralleling Qgd (nC) 110 Configuration Single Simple Drive Requirements Compliant to RoHS Directi

5.54. irfp350lc sihfp350lc.pdf Size:1303K _vishay

IRFP331
IRFP331

IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Available Reduced Gate Drive Requirement RDS(on) (?)VGS = 10 V 0.30 Enhanced 30V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 76 Isolated Central Mounting Hole Qgs (nC) 20 Dynamic dV/dt Rated Qgd (nC) 37 Repetitive Avalanche Rated Con

5.55. irfp340 sihfp340.pdf Size:1548K _vishay

IRFP331
IRFP331

IRFP340, SiHFP340 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.55 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 62 COMPLIANT Fast Switching Qgs (nC) 10 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant to RoHS Directive

Datasheet: IRFP252 , IRFP253 , IRFP254 , IRFP254A , IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP450 , IRFP332 , IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 .

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