All MOSFET. IRFR1205 Datasheet

 

IRFR1205 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFR1205

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 69 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 37 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.027 Ohm

Package: TO252AA

IRFR1205 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFR1205 Datasheet (PDF)

1.1. irfr1205.pdf Size:144K _international_rectifier

IRFR1205
IRFR1205

PD - 91318B IRFR/U1205 HEXFET® Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR1205) VDSS = 55V Straight Lead (IRFU1205) Fast Switching RDS(on) = 0.027? Fully Avalanche Rated G Description ID = 44A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benef

3.1. irfr120a irfu120a.pdf Size:256K _fairchild_semi

IRFR1205
IRFR1205

IRFR/U120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK µA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.155 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Rating

3.2. irfr120.pdf Size:168K _international_rectifier

IRFR1205
IRFR1205

3.3. irfr120pbf irfu120pbf.pdf Size:1326K _international_rectifier

IRFR1205
IRFR1205

PD- 95523A IRFR120PbF IRFU120PbF • Lead-Free 12/03/04 Document Number: 91266 www.vishay.com 1 IRFR/U120PbF Document Number: 91266 www.vishay.com 2 IRFR/U120PbF Document Number: 91266 www.vishay.com 3 IRFR/U120PbF Document Number: 91266 www.vishay.com 4 IRFR/U120PbF Document Number: 91266 www.vishay.com 5 IRFR/U120PbF Document Number: 91266 www.vishay.com 6 IRFR/U120PbF

3.4. irfr120n.pdf Size:142K _international_rectifier

IRFR1205
IRFR1205

PD - 91365B IRFR/U120N HEXFET® Power MOSFET Surface Mount (IRFR120N) D Straight Lead (IRFU120N) VDSS = 100V Advanced Process Technology Fast Switching RDS(on) = 0.21? Fully Avalanche Rated G Description ID = 9.4A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This b

3.5. irfr120a.pdf Size:499K _samsung

IRFR1205
IRFR1205

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristi

3.6. irfr120 irfu120 sihfr120 sihfu120.pdf Size:1989K _vishay

IRFR1205
IRFR1205

IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition • Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 0.27 • Repetitive Avalanche Rated Qg (Max.) (nC) 16 • Surface Mount (IRFR120, SiHFR120) Qgs (nC) 4.4 • Straight Lead (IRFU120, SiHFU120) • Available in Tape and Reel Qgd (nC) 7.7 • F

Datasheet: IRFR024 , IRFR024A , IRFR024N , IRFR025 , IRFR110 , IRFR110A , IRFR111 , IRFR120 , IRF1404 , IRFR120A , IRFR120N , IRFR121 , IRFR130A , IRFR1N60A , IRFR210 , IRFR210A , IRFR212 .

 


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