All MOSFET. ZVN2110ASTOB Datasheet

 

ZVN2110ASTOB MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZVN2110ASTOB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 0.32 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO-92

 ZVN2110ASTOB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZVN2110ASTOB Datasheet (PDF)

 ..1. Size:61K  diodes
zvn2110astoa zvn2110astob zvn2110astz.pdf

ZVN2110ASTOB
ZVN2110ASTOB

N-CHANNEL ENHANCEMENT0A ZVN2110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDSVGS=10V * RDS(on)= 49V8V7V6VD G S5VE-LineTO92 Compatible4VABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT3VDrain-Source Voltage VDS 100 V8 10Continuous Drain Current at Tamb=25C ID 320 mAPulsed Drain Current IDM 6AGate Source Voltage VGS

 6.1. Size:66K  diodes
zvn2110a.pdf

ZVN2110ASTOB
ZVN2110ASTOB

N-CHANNEL ENHANCEMENT0A ZVN2110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDSVGS=10V * RDS(on)= 49V8V7V6VD G S5VE-LineTO92 Compatible4VABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT3VDrain-Source Voltage VDS 100 V8 10Continuous Drain Current at Tamb=25C ID 320 mAPulsed Drain Current IDM 6AGate Source Voltage VGS

 7.1. Size:48K  diodes
zvn2110g.pdf

ZVN2110ASTOB
ZVN2110ASTOB

SOT223 N-CHANNEL ENHANCEMENTZVN2110GMODE VERTICAL DMOS FETISSUE 3 OCTOBER 1995 FEATURESD* 6A PULSE DRAIN CURRENT* FAST SWITCHING SPEED=VVV SVVDPARTMARKING DETAIL - ZVN2110GCOMPLEMENTARY TYPE - ZVP2110GABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITVDrain-Source Voltage VDS 100 V10 Continuous Drain Current at Tamb=25C ID 500 mAPulsed Drain

 7.2. Size:37K  diodes
zvn2110gta zvn2110gtc.pdf

ZVN2110ASTOB
ZVN2110ASTOB

SOT223 N-CHANNEL ENHANCEMENTZVN2110GMODE VERTICAL DMOS FETISSUE 3 OCTOBER 1995 FEATURESD* 6A PULSE DRAIN CURRENT* FAST SWITCHING SPEED=VVV SVVDPARTMARKING DETAIL - ZVN2110GCOMPLEMENTARY TYPE - ZVP2110GABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITVDrain-Source Voltage VDS 100 V10 Continuous Drain Current at Tamb=25C ID 500 mAPulsed Drain

 7.3. Size:26K  diodes
zvn2110c.pdf

ZVN2110ASTOB

N-CHANNEL ENHANCEMENTZVN2110CMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D DE-Line T V TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V VV I T I V 8 V ID VD V V I

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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