All MOSFET. ZVN3306ASTOA Datasheet

 

ZVN3306ASTOA MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZVN3306ASTOA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 0.625 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.4 V
   Maximum Drain Current |Id|: 0.27 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 7 nS
   Drain-Source Capacitance (Cd): 25 pF
   Maximum Drain-Source On-State Resistance (Rds): 5 Ohm
   Package: TO-92

 ZVN3306ASTOA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZVN3306ASTOA Datasheet (PDF)

 ..1. Size:38K  diodes
zvn3306astoa zvn3306astob zvn3306astz.pdf

ZVN3306ASTOA
ZVN3306ASTOA

N-CHANNEL ENHANCEMENTZVN3306AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 60 Volt VDS* RDSon)=5D G SID=E-Line1ATO92 CompatibleABSOLUTE MAXIMUM RATINGS.0.5APARAMETER SYMBOL VALUE UNIT0.25ADrain-Source Voltage VDS 60 V10Continuous Drain Current at Tamb=25C ID 270 mAPulsed Drain Current IDM 3Acs Gate-Source Voltage VGS 20 VPower Dissip

 6.1. Size:51K  diodes
zvn3306a.pdf

ZVN3306ASTOA
ZVN3306ASTOA

N-CHANNEL ENHANCEMENTZVN3306AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 60 Volt VDS* RDSon)=5D G SID=E-Line1ATO92 CompatibleABSOLUTE MAXIMUM RATINGS.0.5APARAMETER SYMBOL VALUE UNIT0.25ADrain-Source Voltage VDS 60 V10Continuous Drain Current at Tamb=25C ID 270 mAPulsed Drain Current IDM 3Acs Gate-Source Voltage VGS 20 VPower Dissip

 7.1. Size:99K  diodes
zvn3306f.pdf

ZVN3306ASTOA
ZVN3306ASTOA

SOT23 N-CHANNEL ENHANCEMENTZVN3306FMODE VERTICAL DMOS FETISSUE 3 JANUARY 1996FEATURES* RDS(on)=5S* 60 Volt VDSDCOMPLEMENTARY TYPE - ZVP3306FGPARTMARKING DETAIL - MCSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb=25C ID 150 mAPulsed Drain Current IDM 3AGate-Source Voltage VGS 20

 7.2. Size:85K  diodes
zvn3306fta zvn3306ftc.pdf

ZVN3306ASTOA
ZVN3306ASTOA

SOT23 N-CHANNEL ENHANCEMENTZVN3306FMODE VERTICAL DMOS FETISSUE 3 JANUARY 1996FEATURES* RDS(on)=5S* 60 Volt VDSDCOMPLEMENTARY TYPE - ZVP3306FGPARTMARKING DETAIL - MCSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb=25C ID 150 mAPulsed Drain Current IDM 3AGate-Source Voltage VGS 20

 7.3. Size:842K  cn vbsemi
zvn3306fta.pdf

ZVN3306ASTOA
ZVN3306ASTOA

ZVN3306FTAwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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