ZVN3306ASTOB
MOSFET. Datasheet pdf. Equivalent
Type Designator: ZVN3306ASTOB
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.625
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 0.27
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 25
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5
Ohm
Package:
TO-92
ZVN3306ASTOB
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZVN3306ASTOB
Datasheet (PDF)
..1. Size:38K diodes
zvn3306astoa zvn3306astob zvn3306astz.pdf
N-CHANNEL ENHANCEMENTZVN3306AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 60 Volt VDS* RDSon)=5D G SID=E-Line1ATO92 CompatibleABSOLUTE MAXIMUM RATINGS.0.5APARAMETER SYMBOL VALUE UNIT0.25ADrain-Source Voltage VDS 60 V10Continuous Drain Current at Tamb=25C ID 270 mAPulsed Drain Current IDM 3Acs Gate-Source Voltage VGS 20 VPower Dissip
6.1. Size:51K diodes
zvn3306a.pdf
N-CHANNEL ENHANCEMENTZVN3306AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 60 Volt VDS* RDSon)=5D G SID=E-Line1ATO92 CompatibleABSOLUTE MAXIMUM RATINGS.0.5APARAMETER SYMBOL VALUE UNIT0.25ADrain-Source Voltage VDS 60 V10Continuous Drain Current at Tamb=25C ID 270 mAPulsed Drain Current IDM 3Acs Gate-Source Voltage VGS 20 VPower Dissip
7.1. Size:99K diodes
zvn3306f.pdf
SOT23 N-CHANNEL ENHANCEMENTZVN3306FMODE VERTICAL DMOS FETISSUE 3 JANUARY 1996FEATURES* RDS(on)=5S* 60 Volt VDSDCOMPLEMENTARY TYPE - ZVP3306FGPARTMARKING DETAIL - MCSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb=25C ID 150 mAPulsed Drain Current IDM 3AGate-Source Voltage VGS 20
7.2. Size:85K diodes
zvn3306fta zvn3306ftc.pdf
SOT23 N-CHANNEL ENHANCEMENTZVN3306FMODE VERTICAL DMOS FETISSUE 3 JANUARY 1996FEATURES* RDS(on)=5S* 60 Volt VDSDCOMPLEMENTARY TYPE - ZVP3306FGPARTMARKING DETAIL - MCSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb=25C ID 150 mAPulsed Drain Current IDM 3AGate-Source Voltage VGS 20
7.3. Size:842K cn vbsemi
zvn3306fta.pdf
ZVN3306FTAwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG
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