ZVN4206AVSTOB MOSFET. Datasheet pdf. Equivalent

   Type Designator: ZVN4206AVSTOB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 0.7 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
   Maximum Drain Current |Id|: 0.6 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 12 nS
   Drain-Source Capacitance (Cd): 60 pF
   Maximum Drain-Source On-State Resistance (Rds): 1 Ohm
   Package: TO-92

ZVN4206AVSTOB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

ZVN4206AVSTOB Datasheet (PDF)

..1. Size:90K diodes
zvn4206avstob zvn4206avstz.pdf

N-CHANNEL ENHANCEMENTZVN4206AVMODE VERTICAL DMOS FETISSUE 3 - APRIL 1998FEATURES* 60 Volt VDS* RDS(on)= 1* Repetitive avalanche rating* No transient protection requiredD* Characterised for 5V logic drive G SAPPLICATIONS* Automotive relay driversE-Line* Stepper motor driverTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Vol

2.1. Size:86K diodes
zvn4206astoa zvn4206astob zvn4206astz zvn4206avstoa.pdf

N-CHANNEL ENHANCEMENTZVN4206AMODE VERTICAL DMOS FETISSUE 2 JUNE 94FEATURES* 60 Volt VDS* RDS(on) =1DGSE-LINETO92 COMPATIBLEABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb=25C ID 600 mAPulsed Drain Current IDM 8AGate-Source Voltage VGS 20 VPower Dissipation at Tamb=25C Ptot 0.7 W

5.1. Size:98K diodes
zvn4206av.pdf