All MOSFET. ZVN4210ASTZ Equivalents Search

 

ZVN4210ASTZ Spec and Replacement


   Type Designator: ZVN4210ASTZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-92

 ZVN4210ASTZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZVN4210ASTZ Specs

 ..1. Size:31K  diodes
zvn4210astoa zvn4210astob zvn4210astz.pdf pdf_icon

ZVN4210ASTZ

N-CHANNEL ENHANCEMENT 0A ZVN4210A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 1.5 * Spice model available D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V 10 Continuous Drain Current at Tamb=25 C ID 450 mA Pulsed Drain Current IDM 6A Gate-Source Voltage VGS 20 V Power... See More ⇒

 6.1. Size:42K  diodes
zvn4210a.pdf pdf_icon

ZVN4210ASTZ

N-CHANNEL ENHANCEMENT 0A ZVN4210A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 1.5 * Spice model available D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V 10 Continuous Drain Current at Tamb=25 C ID 450 mA Pulsed Drain Current IDM 6A Gate-Source Voltage VGS 20 V Power... See More ⇒

 7.1. Size:32K  diodes
zvn4210gta zvn4210gtc.pdf pdf_icon

ZVN4210ASTZ

SOT223 N-CHANNEL ENHANCEMENT ZVN4210G MODE VERTICAL DMOS FET ISSUE 2 - NOVEMBER 1995 FEATURES D * Low RDS(on) = 1.5 PARTMARKING DETAIL - ZVN4210 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25 C ID 0.8 A Pulsed Drain Current IDM 6A Gate-Source Voltage VGS 20 V Power Dissipation at Tamb=25 C P... See More ⇒

 7.2. Size:42K  diodes
zvn4210g.pdf pdf_icon

ZVN4210ASTZ

SOT223 N-CHANNEL ENHANCEMENT ZVN4210G MODE VERTICAL DMOS FET ISSUE 2 - NOVEMBER 1995 FEATURES D * Low RDS(on) = 1.5 PARTMARKING DETAIL - ZVN4210 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25 C ID 0.8 A Pulsed Drain Current IDM 6A Gate-Source Voltage VGS 20 V Power Dissipation at Tamb=25 C P... See More ⇒

Detailed specifications: ZVN4206AVSTOB , ZVN4206AVSTZ , ZVN4206GTA , ZVN4206GTC , ZVN4206GVTA , ZVN4206GVTC , ZVN4210ASTOA , ZVN4210ASTOB , IRF640N , ZVN4210GTA , ZVN4210GTC , ZVN4306ASTOB , ZVN4306ASTZ , ZVN4306AVSTOA , ZVN4306AVSTOB , ZVN4306AVSTZ , ZVN4306GTA .

Keywords - ZVN4210ASTZ MOSFET specs

 ZVN4210ASTZ cross reference
 ZVN4210ASTZ equivalent finder
 ZVN4210ASTZ lookup
 ZVN4210ASTZ substitution
 ZVN4210ASTZ replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 
Back to Top

 


 
.