All MOSFET. IRFR6215 Datasheet

 

IRFR6215 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFR6215

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 13 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.295 Ohm

Package: TO252AA

IRFR6215 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFR6215 Datasheet (PDF)

1.1. irfr6215.pdf Size:141K _international_rectifier

IRFR6215
IRFR6215

PD - 91749 IRFR/U6215 PRELIMINARY HEXFET Power MOSFET P-Channel D 175C Operating Temperature VDSS = -150V Surface Mount (IRFR6215) Straight Lead (IRFU6215) RDS(on) = 0.295? Advanced Process Technology G Fast Switching ID = -13A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the

Datasheet: IRFR410 , IRFR4105 , IRFR411 , IRFR420 , IRFR420A , IRFR5305 , IRFR5410 , IRFR5505 , IRF1405 , IRFR9010 , IRFR9012 , IRFR9014 , IRFR9020 , IRFR9022 , IRFR9024 , IRFR9024N , IRFR9110 .

 


IRFR6215
  IRFR6215
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