All MOSFET. IRFS542 Datasheet

 

IRFS542 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFS542

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 25 A

Maximum Junction Temperature (Tj): 150 ┬░C

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: TO220

IRFS542 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFS542 Datasheet (PDF)

4.1. irfs540a.pdf Size:507K _samsung

IRFS542
IRFS542

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.052 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 Á A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

5.1. irfs59n10d.pdf Size:138K _international_rectifier

IRFS542
IRFS542

PD - 93890 IRFB59N10D IRFS59N10D SMPS MOSFET IRFSL59N10D HEXFET« Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.025? 59A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Characterized Avalanche Vol

5.2. irfs52n15d.pdf Size:134K _international_rectifier

IRFS542
IRFS542

PD - 94357 IRFB52N15D IRFS52N15D SMPS MOSFET IRFSL52N15D HEXFET« Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.032? 60A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current TO-220

5.3. irfs520 irfs521.pdf Size:277K _samsung

IRFS542
IRFS542

´╗┐

5.4. irfszxx irfs5xx irfs6xx irfs7xx.pdf Size:28K _samsung

IRFS542

´╗┐

5.5. irfs530a.pdf Size:509K _samsung

IRFS542
IRFS542

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10.7 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 Á A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.092 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Rating

5.6. irfs520a.pdf Size:504K _samsung

IRFS542
IRFS542

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.2 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Á Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

5.7. irfs550a.pdf Size:510K _samsung

IRFS542
IRFS542

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 21 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Á Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

Datasheet: IRFS530 , IRFS530A , IRFS531 , IRFS532 , IRFS533 , IRFS540 , IRFS540A , IRFS541 , IRFP4227 , IRFS543 , IRFS550A , IRFS610A , IRFS614A , IRFS620 , IRFS620A , IRFS622 , IRFS624 .

 


IRFS542
  IRFS542
  IRFS542
 

social 

LIST

Last Update

MOSFET: IRLZ34SPBF | IRLZ34S | IRLZ34PBF | IRLZ34NSPBF | IRLZ34NPBF | IRLZ34NLPBF | IRLZ34L | IRLZ44NSPBF | IRLZ44NPBF | IRLZ44NLPBF | IRLZ44ZSPBF | IRLZ44ZPBF | IRLZ44ZLPBF | IRLZ44SPBF | IRLZ44S |