All MOSFET. IRFS730 Datasheet

 

IRFS730 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFS730

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Drain Current |Id|: 5.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO220

IRFS730 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFS730 Datasheet (PDF)

1.1. irfs730a.pdf Size:506K _samsung

IRFS730
IRFS730

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology ? RDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V ? Lower RDS(ON) : 0.765 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Un

5.1. irfszxx irfs5xx irfs6xx irfs7xx.pdf Size:28K _samsung

IRFS730



5.2. irfs720a.pdf Size:501K _samsung

IRFS730
IRFS730

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V ? Lower RDS(ON) : 1.408 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Un

5.3. irfs740a.pdf Size:931K _samsung

IRFS730
IRFS730

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

Datasheet: IRFS650A , IRFS654A , IRFS710A , IRFS720 , IRFS720A , IRFS721 , IRFS722 , IRFS723 , IRF9640 , IRFS730A , IRFS731 , IRFS732 , IRFS733 , IRFS740 , IRFS740A , IRFS741 , IRFS742 .

 


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