All MOSFET. RU30291R Datasheet

 

RU30291R Datasheet and Replacement


   Type Designator: RU30291R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 290 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 90 nC
   tr ⓘ - Rise Time: 98 nS
   Cossⓘ - Output Capacitance: 1010 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO-220
 

 RU30291R substitution

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RU30291R Datasheet (PDF)

 ..1. Size:306K  ruichips
 ru30291r.pdf pdf_icon

RU30291R

RU30291RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/290A,RDS (ON) =1.8m(Typ.)@VGS=10VRDS (ON) =2.6m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPS Switching Applications

 8.1. Size:303K  ruichips
 ru30290r.pdf pdf_icon

RU30291R

RU30290RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/290A,RDS (ON) =1.8m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPS Switching ApplicationsN-Channel MOSFETAbsolute Maximu

 9.1. Size:301K  ruichips
 ru30230r.pdf pdf_icon

RU30291R

RU30230RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/230A,RDS (ON) =2m (Typ.) @ VGS=10V,IDS=75ARDS (ON) =2.5m (Typ.) @ VGS=4.5V,IDS=60A Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche testedTO-220 175C Operating Temperature Lead Free and Green AvailableApplications DC/DC Converters

 9.2. Size:291K  ruichips
 ru3020l.pdf pdf_icon

RU30291R

RU3020LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/20A,RDS (ON) =15 m(Typ.)@VGS=10VRDS (ON) =25 m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum RatingsSym

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