All MOSFET. IRFW550A Datasheet

 

IRFW550A MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFW550A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 167 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 1750 pF

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TO263

IRFW550A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFW550A Datasheet (PDF)

1.1. irfw550a irfi550a.pdf Size:266K _fairchild_semi

IRFW550A
IRFW550A

IRFW/I550A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK ? 175 C Operating Temperature 2 A (Max.) @ VDS = 100V Lower Leakage Current : 10 ? Lower RDS(ON) : 0.032 (Typ.) 1 1 2 3 3 1. Gate 2. Drai

1.2. irfw550a.pdf Size:513K _samsung

IRFW550A
IRFW550A

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature 2 Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.032 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum R

 

 

 

 5.1. irfw540a.pdf Size:508K _samsung

IRFW550A
IRFW550A

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.052 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature 2 Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.041 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maxi

5.2. irfw520a.pdf Size:503K _samsung

IRFW550A
IRFW550A

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature 2 Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.155 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maxi

 5.3. irfw530a.pdf Size:508K _samsung

IRFW550A
IRFW550A

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature 2 Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Max

Datasheet: IRFU9222 , IRFU9310 , IRFUC20 , IRFW450 , IRFW510A , IRFW520A , IRFW530A , IRFW540A , IRF830 , IRFW610A , IRFW614A , IRFW620A , IRFW624A , IRFW630A , IRFW634A , IRFW640A , IRFW644A .

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