All MOSFET. IRL630A Datasheet

 

IRL630A MOSFET. Datasheet pdf. Equivalent

Type Designator: IRL630A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 69 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 580 pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: TO220

IRL630A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRL630A Datasheet (PDF)

1.1. irl630a.pdf Size:911K _samsung

IRL630A
IRL630A

Advanced Power MOSFET FEATURES BVDSS = 200 V Logic-Level Gate Drive ? RDS(on) = 0.4 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 9 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V ? Lower RDS(ON) : 0.335 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol

4.1. irl630s.pdf Size:168K _international_rectifier

IRL630A
IRL630A

PD - 9.1254 IRL630S HEXFET® Power MOSFET Surface Mount Available in Tape & Reel VDSS = 200V Dynamic dv/dt Rating Repetitive Avalanche Rated RDS(on) = 0.40? Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V 150°C Operating Temperature ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, r

4.2. irl630pbf.pdf Size:1360K _international_rectifier

IRL630A
IRL630A

PD- 95756 IRL630PbF • Lead-Free 8/24/04 Document Number: 91303 www.vishay.com 1 IRL630PbF Document Number: 91303 www.vishay.com 2 IRL630PbF Document Number: 91303 www.vishay.com 3 IRL630PbF Document Number: 91303 www.vishay.com 4 IRL630PbF Document Number: 91303 www.vishay.com 5 IRL630PbF Document Number: 91303 www.vishay.com 6 IRL630PbF Document Number: 91303 www.visha

4.3. irl630.pdf Size:150K _international_rectifier

IRL630A
IRL630A

PD -9.1255 IRL630 HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated VDSS = 200V Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V RDS(on) = 0.40? 150°C Operating Temperature Fast Switching Ease of paralleling ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedi

4.4. irl630s sihl630s.pdf Size:218K _vishay

IRL630A
IRL630A

IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 • Surface Mount RDS(on) (?)VGS = 5 V 0.40 • Available in Tape and Reel Qg (Max.) (nC) 40 • Dynamic dV/dt Rating • Repetitive Avalanche Rated Qgs (nC) 5.5 • Logic-Level Gate Drive Qgd (nC) 24 • RDS(on) Specified at VGS = 4 V and 5 V • 150 °C Op

Datasheet: IRL610 , IRL610A , IRL611 , IRL620 , IRL620A , IRL620S , IRL621 , IRL630 , 40673 , IRL630S , IRL631 , IRL640 , IRL640A , IRL640S , IRL641 , IRLBA1304 , IRLBA1304P .

 


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