All MOSFET. IRLS510A Datasheet

 

IRLS510A MOSFET. Datasheet pdf. Equivalent

Type Designator: IRLS510A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 23 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 4.5 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 180 pF

Maximum Drain-Source On-State Resistance (Rds): 0.44 Ohm

Package: TO220F

IRLS510A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLS510A Datasheet (PDF)

1.1. irls510a.pdf Size:889K _samsung

IRLS510A
IRLS510A

Advanced Power MOSFET FEATURES BVDSS = 100 V Logic Level Gate Drive ? RDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 4.5 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.336 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symb

5.1. irls530a.pdf Size:945K _samsung

IRLS510A
IRLS510A

Advanced Power MOSFET FEATURES BVDSS = 100 V Logic Level Gate Drive RDS(on) = 0.12 ? Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 10.7 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.101? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol

5.2. irls540a.pdf Size:938K _samsung

IRLS510A
IRLS510A

Advanced Power MOSFET FEATURES BVDSS = 100 V Logic Level Gate Drive RDS(on) = 0.058 ? Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 17 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.046 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbo

5.3. irls520a.pdf Size:892K _samsung

IRLS510A
IRLS510A

Advanced Power MOSFET FEATURES BVDSS = 100 V Logic Level Gate Drive ? ? RDS(on) = 0.22 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 7.2 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.176 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

Datasheet: IRLR220A , IRLR230A , IRLR2703 , IRLR2705 , IRLR2905 , IRLR3103 , IRLR3303 , IRLR3410 , 2N3824 , IRLS520A , IRLS530A , IRLS540A , IRLS610A , IRLS620A , IRLS630A , IRLS640A , IRLSZ14A .

 


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