All MOSFET. IXFH58N20 Datasheet

 

IXFH58N20 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFH58N20

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 58 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TO247

IXFH58N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFH58N20 Datasheet (PDF)

1.1. ixfh42n20 ixfm42n20 ixfh58n20 ixfm58n20 ixft50n20 ixfh50n20 ixfm50n20 ixft58n20.pdf Size:104K _ixys

IXFH58N20
IXFH58N20

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs 200 V 42 A 60mW IXFH/IXFM42N20 200 V 50 A 45mW IXFH/IXFM/IXFT50N20 200 V 58 A 40mW IXFH/IXFT58N20 N-Channel Enhancement Mode trr ? 200 ns High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C; RGS = 1 MW 200 V TO-268 (D3) Case Style VGS Contin

1.2. ixfh58n20q ixft58n20q.pdf Size:355K _ixys

IXFH58N20
IXFH58N20

IXFH 58N20Q VDSS = 200 V HiPerFETTM IXFT 58N20Q ID25 = 58 A Power MOSFETs RDS(on) = 40 mW Q-Class trr ? 200 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet TO-268 (D3) (IXFT) Case Style Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 200 V VGS Continuous 20 V G (TAB) VGSM Trans

5.1. ixft50n50p3 ixfq50n50p3 ixfh50n50p3.pdf Size:139K _update

IXFH58N20
IXFH58N20

Polar3TM HiperFETTM VDSS = 500V IXFT50N50P3 ID25 = 50A Power MOSFET IXFQ50N50P3   RDS(on)    125m     IXFH50N50P3 N-Channel Enhancement Mode TO-268 (IXFT) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V G VDGR TJ = 25C to 150C, RGS = 1M 500 V D

5.2. ixfh52n30q ixfk52n30q ixft52n30q.pdf Size:70K _ixys

IXFH58N20
IXFH58N20

IXFH 52N30Q HiPerFETTM VDSS = 300 V IXFK 52N30Q Power MOSFETs ID25 = 52 A IXFT 52N30Q Q-Class RDS(on) = 60 mW trr ? 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C; RGS = 1 MW 300 V VGS Continuous 20 V

5.3. ixft52n50p2 ixfh52n50p2.pdf Size:127K _ixys

IXFH58N20
IXFH58N20

Advance Technical Information PolarP2TM HiperFETTM VDSS = 500V IXFH52N50P2 ID25 = 52A Power MOSFET IXFT52N50P2 ? ? RDS(on) ? ? ? 120m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-247 (IXFH) Fast Intrinsic Diode G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V TO-268 (IXFT) VDGR TJ = 25C to 150C, RGS = 1M? 500 V VGSS Continuous

Datasheet: IXFH32N50Q , IXFH35N30 , IXFH40N30 , IXFH40N30Q , IXFH42N20 , IXFH4N100Q , IXFH50N20 , IXFH52N30Q , IRFP4229 , IXFH58N20Q , IXFH60N25Q , IXFH67N10 , IXFH6N100 , IXFH6N100Q , IXFH6N90 , IXFH70N15 , IXFH75N10 .

 


IXFH58N20
  IXFH58N20
  IXFH58N20
 

social 

LIST

Last Update

MOSFET: IRLZ34SPBF | IRLZ34S | IRLZ34PBF | IRLZ34NSPBF | IRLZ34NPBF | IRLZ34NLPBF | IRLZ34L | IRLZ44NSPBF | IRLZ44NPBF | IRLZ44NLPBF | IRLZ44ZSPBF | IRLZ44ZPBF | IRLZ44ZLPBF | IRLZ44SPBF | IRLZ44S |