All MOSFET. IXFK180N10 Datasheet

 

IXFK180N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFK180N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 560 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 180 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: TO264

IXFK180N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFK180N10 Datasheet (PDF)

1.1. ixfk180n15p ixfx180n15p.pdf Size:178K _ixys

IXFK180N10
IXFK180N10

VDSS = 150 V IXFK 180N15P PolarTM HiPerFET ID25 = 180 A IXFX 180N15P Power MOSFET ? ? RDS(on) ? 11 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 150 V VDS Continuous 20 V TO-264 (IXFK) VGSM Transient 30 V ID25

1.2. ixfk180n10 ixfx180n10.pdf Size:109K _ixys

IXFK180N10
IXFK180N10

HiPerFETTM IXFK 180N10 VDSS = 100 V IXFX 180N10 ID25 = 180 A Power MOSFETs RDS(on) = 8 mW Single MOSFET Die trr ? 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25C to 150C 100 V VDGR TJ = 25C to 150C; RGS = 1 MW 100 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D ID25 TC = 25C (MOSFET chip capability) 180 A ID(RMS) Ex

2.1. ixfk180n07 ixfx180n07.pdf Size:80K _ixys

IXFK180N10
IXFK180N10

IXFK 180N07 VDSS = 70 V HiPerFETTM IXFX 180N07 ID25 = 180 A Power MOSFETs ? RDS(on) = 6 m? ? ? ? Single MOSFET Die ? trr ? ? 250 ns ? ? Preliminary Data Sheet Symbol Test Conditions Maximum Ratings PLUS 247TM VDSS TJ = 25C to 150C70 V VDGR TJ = 25C to 150C; RGS = 1 M? 70 V D (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25C (MOSFET chip capability) 18

2.2. ixfk180n25t ixfx180n25t.pdf Size:138K _ixys

IXFK180N10
IXFK180N10

Advance Technical Information GigaMOSTM VDSS = 250V IXFK180N25T ID25 = 180A Power MOSFET IXFX180N25T ? ? RDS(on) ? 12.9m? ? ? ? ? ? ? ? trr ? 200ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 250 V G VDGR TJ = 25C to 150C, RGS = 1M? 250 V D (TAB) S VGSS Continuous 2

2.3. ixfk180n085 ixfx180n085.pdf Size:46K _ixys

IXFK180N10
IXFK180N10

Advanced Technical Information HiPerFETTM IXFK 180N085 VDSS = 85 V IXFX 180N085 ID25 = 180 A Power MOSFETs RDS(on) = 7 mW Single MOSFET Die trr £ 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25°C to 150°C85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 85 V D (TAB) G VGS Continuous ±20 V D VGSM Transient ±30 V ID25 TC = 25°C (MOSFET chip capability) 1

Datasheet: IXFK110N07 , IXFK110N20 , IXFK120N20 , IXFK150N10 , IXFK150N15 , IXFK170N10 , IXFK180N07 , IXFK180N085 , IRF150 , IXFK20N80Q , IXFK26N60Q , IXFK26N90 , IXFK27N80 , IXFK32N50Q , IXFK32N60 , IXFK33N50 , IXFK34N80 .

 


IXFK180N10
  IXFK180N10
  IXFK180N10
 

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